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GBL10/72-E4 PDF预览

GBL10/72-E4

更新时间: 2024-02-16 13:20:38
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 55K
描述
DIODE 3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBL, 4 PIN, Bridge Rectifier Diode

GBL10/72-E4 技术参数

是否无铅:不含铅生命周期:Active
包装说明:R-PSIP-T4针数:4
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.6Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSIP-T4
JESD-609代码:e3最大非重复峰值正向电流:150 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
最大重复峰值反向电压:1000 V表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

GBL10/72-E4 数据手册

 浏览型号GBL10/72-E4的Datasheet PDF文件第2页 
GBL005 thru GBL10  
Vishay Semiconductors  
formerly General Semiconductor  
Glass Passivated Single-Phase  
Bridge Rectifier  
Reverse Voltage 50 and 1000 V  
Forward Current 4.0 A  
Case Type GBL  
Features  
0.825 (20.9)  
0.815 (20.7)  
0.125 (3.17)  
x 45 degrees  
Chamfer  
• This series is UL listed under the Recognized  
Component Index, file number E54214  
• Glass passivated chip junction  
• High case dielectric strength  
• Typical IR less than 0.1µA  
0.421 (10.7)  
0.411 (10.4)  
0.080 (2.03)  
0.060 (1.50)  
• High surge current capability  
• Ideal for printed circuit boards  
0.098 (2.5)  
0.075 (1.9)  
0.718 (18.2)  
0.682 (17.3)  
Lead Depth  
0.095 (2.41)  
0.080 (2.03)  
0.098 (2.5)  
0.075 (1.9)  
Mechanical Data  
Case: Molded plastic body over passivated junctions  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
High temperature soldering guaranteed:  
260°C/10 seconds, 0.375" (9.5mm) lead length,  
5lbs. (2.3kg) tension  
Mounting Position: Any  
Weight: 0.071 oz., 2.0 g  
Epoxy meets UL 94V-0 Flammability Rating  
Packaging codes/options:  
0.022 (0.56)  
0.018 (0.46)  
0.050 (1.27)  
0.040 (1.02)  
(5.3)  
(4.8)  
0.210  
0.190  
0.040 (1.02)  
0.030 (0.76)  
0.140 (3.56)  
0.128 (3.25)  
0.026 (0.66)  
0.020 (0.51)  
1/400 EA. per Bulk Tray Stack  
Polarity shown on front side of case, positive lead beveled corner.  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
GBL  
GBL  
01  
GBL  
02  
GBL  
04  
GBL GBL GBL  
Parameter  
Symbol 005  
06  
08  
10  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
Maximum DC blocking voltage  
100  
1000  
V
Maximum average forward  
rectified output current at  
TC=50°C  
TA=40°C  
4.0(1)  
IF(AV)  
A
A
3.0(2)  
Peak forward surge current single  
sine-wave superimposed on rated load  
(JEDEC Method) TJ=150°C  
IFSM  
I2t  
150  
93  
Rating for fusing (t<8.3ms)  
A2sec  
°C/W  
°C  
R
ΘJA  
22(2)  
Typical thermal resistance per leg  
R
ΘJL  
3.5(1)  
Operating junction storage and temperature range TJ, TSTG  
-55 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Maximum instantaneous forward drop per leg  
at 4.0 Amperes  
VF  
1.00  
V
Maximum DC reverse current at rated TA= 25°C  
5.0  
500  
IR  
µA  
DC blocking voltage per leg  
TA=125°C  
Typical junction capacitance per leg at 4.0V, 1MHz  
CJ  
95  
40  
pF  
Notes: (1) Unit mounted on 3.0 x 3.0 x 0.11" thick (7.5 x 7.5 x 0.3cm) Al. plate  
(2) Unit mounted on P.C.B. at 0.375" (9.5mm) lead length and 0.5 x 0.5" (12 x12mm) copper pads  
Document Number 88609  
24-Aug-04  
www.vishay.com  
1

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