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GBL10-E3 PDF预览

GBL10-E3

更新时间: 2024-01-11 06:50:29
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 100K
描述
DIODE 3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBL, 4 PIN, Bridge Rectifier Diode

GBL10-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSIP-T4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.14
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSIP-T4JESD-609代码:e3
最大非重复峰值正向电流:150 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:1000 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GBL10-E3 数据手册

 浏览型号GBL10-E3的Datasheet PDF文件第2页浏览型号GBL10-E3的Datasheet PDF文件第3页浏览型号GBL10-E3的Datasheet PDF文件第4页 
GBL005 thru GBL10  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
FEATURES  
• UL recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
• Typical I less than 0.1 µA  
R
~
~
• High case dielectric strength  
• Solder dip 260 °C, 40 s  
~
~
Case Type GBL  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
General purpose use in ac-to-dc bridge full wave  
rectification for monitor, TV, printer, SMPS, adapter,  
audio equipment, and home appliances application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
4 A  
VRRM  
IFSM  
IR  
50 V to 1000 V  
150 A  
MECHANICAL DATA  
Case: GBL  
5 µA  
Epoxy meets UL 94V-0 flammability rating  
VF  
1.0 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
150 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked on body  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL GBL005 GBL01 GBL02 GBL04 GBL06 GBL08 GBL10 UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified  
output current at  
T
T
C = 50 °C  
A = 40 °C  
4.0 (1)  
3.0 (2)  
IF(AV)  
A
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
I2t  
150  
A
Rating for fusing (t < 8.3 ms)  
93  
A2s  
°C  
Operating junction and storage temperature range TJ, TSTG  
Notes:  
(1) Unit mounted on 3.0 x 3.0 x 0.11" thick (7.5 x 7.5 x 0.3 cm) aluminum plate  
(2) Unit mounted on P.C.B. at 0.375" (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads  
- 55 to + 150  
Document Number: 88609  
Revision: 30-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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