Datasheet > GBJ25B

GBJ25B

更新时间： 2024-02-17 19:46:43

品牌	Logo	应用领域
SECOS		二极管局域网
页数	文件大小	规格书
2页	184K
描述
25.0 AMP Glass Passivated Bridge Rectifiers

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技术参数
数据手册

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GBJ25B 技术参数

生命周期：	Active	包装说明：	R-PSFM-T4
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.82	其他特性：	HIGH RELIABILITY, UL RECOGNIZED
最小击穿电压：	1000 V	配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	BRIDGE RECTIFIER DIODE
JESD-30 代码：	R-PSFM-T4	最大非重复峰值正向电流：	350 A
元件数量：	4	相数：	1
端子数量：	4	最高工作温度：	150 °C
最低工作温度：	-55 °C	最大输出电流：	25 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	最大重复峰值反向电压：	1000 V
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE

GBJ25B 数据手册

GBJ25A THRU GBJ25M

VOLTAGE 50V ~ 1000V

Elektronische Bauelemente

25.0 AMP Glass Passivated Bridge Rectifiers

RoHS Compliant Product

A suffix of “-C” specifies halogen-free.

4.6 0.2

3.6 0.2

30 0.3

ƔFEATURES

Surge overload rating – 350 amperes peak

2.5 0.2

Ideal for printed circuit board

Reliable low cost construction utilizing

Molded plastic technique

2.2 0.2

Plastic material has underwrites laboratory

Flammability classification 94V-0

1 0.1

7.5

0.7 0.1

7.5

0.2

Polarity: marked on body

Mounting position: Any

2.7 0.2

0.2

10 0.2

Dimensions in millimeters

ƔMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 к ambient temperature unless otherwise specified.

Resistive or inductive load, 60Hz,

For capacitive load, derate current by 20%.

GBJ

25A

GBJ

25B

100

GBJ

25D

200

140

200

GBJ

25G

400

280

400

25.0

4.2

GBJ

25J

600

420

600

GBJ

25M

1000

700

1000

TYPE NUMBER

SYMBOL

UNITS

25K

800

560

800

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

Maximum DC Blocking Voltage

Maximum Average Forward (with heatsink Note2)

Rectified Current @ T_C=100к(without heatsink)

Peak Forward Surge Current, 8.3 ms single

half Sine-wave superimposed

I_(AV)

I_FSM

350

on rated load (JEDEC method)

Maximum Forward Voltage at 2.0A

Maximum DC Reverse Current Ta=25 к

at Rated DC Blocking Voltage Ta=125 к

I²t Rating for fusing (t<8.3ms)

V_F

I_R

1.05

500

510

µA

A²S

I²t

C_J

Typical Junction Capacitance

per element (Note1)

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

R_șJC

T_J

T_STG

0.6

- 55 ~ + 150

к / W

NOTES:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Device mounted on 50mm x 50mm x 1.6mm Cu Plate Heatsink.

ht t p:/ /www. SeCoSGmbH. com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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