Datasheet > GBJ2004

GBJ2004

更新时间： 2024-03-03 10:09:37

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	222K
描述
6KBJ

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数据手册

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GBJ2004 数据手册

GBJ20005 THRU GBJ2010

（T =25℃Unless otherwise specified）

■Electrical Characteristics

TEST

GBJ20005 GBJ2001 GBJ2002 GBJ2004 GBJ2006 GBJ2008 GBJ2010

PARAMETER

SYMBOL

UNIT

CONDITIONS

Maximum instantaneous

forward voltage drop per diode

1.0

=10.0A

T =25℃

Maximum DC reverse current

at rated DC blocking voltage

per diode

μA

100

T =125℃

Measured at 1MHz

and Applied

Reverse Voltage of

4.0 V.D.C

Typical junction capacitance

Thermal Characteristics （T =25℃Unless otherwise specified）

■

GBJ20005 GBJ2001 GBJ2002 GBJ2004 GBJ2006 GBJ2008 GBJ2010

PARAMETER

SYMBOL

UNIT

Between junction and ambient,

Without heatsink

18.0

1.5

θJ-A

Thermal

Resistance

℃/W

Between junction and case,

With heatsink

θJ-C

Note: Device mounted on 75mm x 45mm x 5.5mm Aluminum Plate Heatsink.

Ordering Information (Example)

■

PACKING

MINIIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

UNIT WEIGHT(g)

DELIVERY MODE

CODE

Approximate 6.5

750

1500

TUBE

GBJ20005 THRU GBJ2010

Characteristics(Typical)

■

FIG1:Io-Tc Curve

FIG2:Surge Forward Current Capability

420

280

140

heatsink

Tc-sensing point

half sine wave

with heatsink

8.3ms 8.3ms

1cycle

non-repetitive

Tj=25℃

8.0

4.0

without heatsink

100 110 120 130 140 150

160

100

Number of Cycles

Case Temperature(℃)

2 / 4

S-B035

Rev. 2.5, 23-Apr-22

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

123 4

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