Datasheet > GBJ2006

GBJ2006

更新时间： 2024-02-12 06:10:55

品牌	Logo	应用领域
平伟 - PINGWEI		/
页数	文件大小	规格书
1页	43K
描述
GLASS PASSIVATED BRIDGE RECTIFIER

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技术参数
数据手册

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GBJ2006 技术参数

生命周期：	Contact Manufacturer	包装说明：	R-PSFM-T4
Reach Compliance Code：	unknown	风险等级：	5.16
最小击穿电压：	600 V	配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	BRIDGE RECTIFIER DIODE
JESD-30 代码：	R-PSFM-T4	最大非重复峰值正向电流：	260 A
元件数量：	4	相数：	1
端子数量：	4	最高工作温度：	150 °C
最低工作温度：	-55 °C	最大输出电流：	4.1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	最大重复峰值反向电压：	600 V
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	Base Number Matches：	1

GBJ2006 数据手册

CHONGQING PINGYANG ELECTRONICS CO.,LTD.

GBJ20005 THRU GBJ2010

GLASS PASSIVATED BRIDGE RECTIFIER

VOLTAGE：50-1000V

CURRENT：20.0A

FEATURES

·Low leakage

GBJ

.189(4.8)

.173(4.4)

1.193(30.3)

1.169(29.7)

·Low forward voltage

·Surge overload ratings-240 Amperes

HOLE FOR NO.

.150(3.8)

.134(3.4)

6 SCREW

.119

(0.5)

.800(20.3)

.697(17.7)

.441(11.2)

.425(10.8)

.184(3.4)

.122(3.1)

+ ~ ~ -

.106(2.7)

.096(2.3)

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

.114(2.9)

.098(2.5)

.708(18.0)

.669(17.0)

.165(4.2)

.150(3.8)

.031(0.8)

.023(0.6)

MECHANICAL DATA

·Case: Molded plastic

·Epoxy: UL 94V-0 rate flame retardant

·Lead: MIL-STD- 202E, Method 208 guaranteed

·Polarity: Symbols molded or marked on body

·Mounting: Thru hole for 6# screw

·Weight: 6.6 grams

.402(1.1)

.386(0.9)

.303(7.7)

.287(7.3)

.303(7.7)

.287(7.3)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

GBJ GBJ GBJ GBJ GBJ GBJ GBJ

20005 2001 2002 2004 2006 2008 2010

units

SYMBOL

V_RRM

V_RMS

V_DC

100 200 400 600 800 1000

70 140 280 420 560 700

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

100 200 400 600 800 1000

Maximum Average Forward rectified Output

Current at T_C=100°C

I_o

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

I_FSM

240

Maximum Forward Voltage Drop per element at

10.0 A DC

V_F

1.1

Maximum DC Reverse Current

at Rated DC Blocking Voltage

per element

@ T_A=25°C

I_R

µA

500

@ T_A=125°C

I²t

C_J

240

A²S_ec

I²t Rating for Fusing (t<8.3ms)

Typical Junction Capacitance per Element(Note 1)

Typical Thermal Resistance, Junction to Case

(Note 2)

R_θJA

2.7

°C/W

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

2. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.

１

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