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GA4F3M-T1-AT PDF预览

GA4F3M-T1-AT

更新时间: 2024-01-05 09:01:56
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
24页 514K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-70

GA4F3M-T1-AT 数据手册

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±
GA4xxx  
[GA4L4M]  
TYPICAL CHARACTERISTICS (TA = 25°C)  
COLLECTOR TO EMITTER VOLTAGE vs.  
COLLECTOR CURRENT  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
0.5  
0.4  
0.3  
0.2  
0.1  
0
50  
VIN = 5.0 V  
10.0 V  
μ
IB = 220 A  
170  
120  
70  
μ
A
40  
30  
μ
A
20  
10  
0
15.0 V  
μ
μ
A
A
20  
0
2
4
6
8
10  
0
20  
40  
V
CE - Collector to Emitter Voltage - V  
I
C
- Collector Current - mA  
DC CURRENT GAIN vs. COLLECTOR CURRENT  
COLLECTOR SATURATION VOLTAGE vs.  
COLLECTOR CURRENT  
1000  
10  
IC = 10IB  
VCE = 5.0 V  
1
0.1  
TA = 75°C  
25°C  
100  
10  
TA = 75°C  
25°C  
25°C  
25°C  
0.01  
1
10  
- Collector Current - mA  
100  
1
10  
100  
I
C
I
C
- Collector Current - mA  
INPUT VOLTAGE vs. COLLECTOR CURRENT  
VCE = 0.2 V  
COLLECTOR CURRENT vs. INPUT VOLTAGE  
100  
10  
1
1000  
VCE = 5.0 V  
TA = 75°C  
μ
100  
10  
1
TA = 25°C  
25°C  
25°C  
75°C  
25°C  
0.1  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
1
10  
100  
V
IN - Input Voltage - V  
I
C
- Collector Current - mA  
RESISTER vs. AMBIENT TEMPERATURE  
80  
60  
40  
20  
0
-25  
0
25  
50  
75  
100  
T
A
- Ambient Temperature - °C  
6
Data Sheet D16494EJ3V0DS  

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