Datasheet > 晶体管 > IGBT> GA200SA60S

GA200SA60S

更新时间： 2025-09-15 10:38:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管栅
页数	文件大小	规格书
9页	182K
描述
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

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GA200SA60S 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOT-227	包装说明：	FLANGE MOUNT, R-PUFM-X4
针数：	4	Reach Compliance Code：	unknown
风险等级：	5.37	其他特性：	LOW CONDUCTION LOSS
外壳连接：	ISOLATED	最大集电极电流 (IC)：	200 A
集电极-发射极最大电压：	600 V	配置：	SINGLE
门极-发射极最大电压：	20 V	JESD-30 代码：	R-PUFM-X4
元件数量：	1	端子数量：	4
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	630 W	认证状态：	Not Qualified
子类别：	Insulated Gate BIP Transistors	表面贴装：	NO
端子形式：	UNSPECIFIED	端子位置：	UPPER
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	POWER CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	2160 ns
标称接通时间 (ton)：	132 ns

GA200SA60S 数据手册

GA200SA60SP

Vishay Semiconductors

Insulated Gate Bipolar Transistor

Ultralow V_CE(on), 342 A

FEATURES

• Standard: Optimized for minimum saturation

voltage and low speed up to 5 kHz

• Lowest conduction losses available

• Fully isolated package (2500 V_AC

)

• Very low internal inductance (5 nH typical)

• Industry standard outline

SOT-227

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

PRODUCT SUMMARY

V_CES

600 V

1.33 V

200 A

BENEFITS

_CE(on)(typical) at 200 A, 25 °C

• Designed for increased operating efficiency in power

conversion: UPS, SMPS, TIG welding, induction heating

_Cat T_C= 97 °C ⁽¹⁾

Note

• Easy to assemble and parallel

(1)

Maximum I_RMScurrent admitted 100 A to do not exceed the

maximum temperature of terminals

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

600

UNITS

Collector to emitter breakdown voltage

V_CES

T_C= 25 °C

_C= 97 °C

342

(1)

Continuous collector current

Pulsed collector current

I_C

200

Repetitive rating; V_GE= 20 V, pulse width limited

by maximum junction temperature

See fig. 15

I_CM

400

V_CC= 80 % (V_CES), V_GE= 20 V,

L = 10 μH, R_g= 2.0 ,

See fig. 14

Clamped Inductive load current

I_LM

Gate to emitter voltage

V_GE

E_ARV

V_ISOL

Repetitive rating; pulse width limited by

maximum junction temperature

Reverse voltage avalanche energy

RMS isolation voltage

155

Any terminal to case, t = 1 minute

T_C= 25 °C

2500

781

Maximum power dissipation

P_D

T_C= 100 °C

312

Operating junction and storage

temperature range

T_J, T_Stg

- 55 to + 150

12 (1.3)

°C

Mounting torque

6-32 or M3 screw

lbf in (N  m)

Note

(1)

Maximum I_RMScurrent admitted 100 A to do not exceed the maximum temperature of terminals

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TYP.

MAX.

UNITS

°C/W

Junction to case

R_thJC

0.16

Case to sink, flat, greased surface

Weight of module

R_thCS

0.05

Document Number: 94363

Revision: 22-Jul-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5 6 7...9

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与GA200SA60S相关器件

型号	品牌	获取价格	描述	数据表
GA200SA60SP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
GA200SA60SP	VISHAY	获取价格	Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A
GA200SA60SPBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, SOT-227, 4 PIN
GA200SA60U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
GA200SA60U	VISHAY	获取价格	元器件封装:SOT-227B;
GA200SA60UP	VISHAY	获取价格	Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
GA200SA60UPBF	INFINEON	获取价格	暂无描述
GA200T8R1SZ	SHARP	获取价格	Linear Output Photo IC,
GA200TD120S	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,
GA200TD120U	INFINEON	获取价格	HALF-BRIDGE IGBT DOUBLE INT-A-PAK

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