G3VM-31QV□/61QV□□
■参考数据
MOS FET 继电器
z连续负载电流-环境温度
z连续负载电流-MOS FET导通电压
G3VM-31QVH/31QVL/61QVH/61QV2H/61QV2L
G3VM-31QVH/31QVL/61QVH/61QV2H/61QV2L
IO - VON
(平均值)
IO - Ta
(最大值)
2.0
1.0
0
1.6
Ta= 25°C, t<1s
(G3VM-31QVH/-61QVH/-61QV2H)
1.2
VIN=5 V
(G3VM-31QVL/-61QV2L)
VIN=2 V
G3VM-31QVH/-31QVL
0.8
0.4
G3VM-61QV2H
/-61QV2L
G3VM-61QVH
0
G3VM-61QV2H/
-0.4
-61QV2L
-0.8
G3VM-61QVH
-1.2
G3VM-31QVH/-31QVL
-1.6
-0.40
-0.20
0.00
0.20
0.40
-40 -20
0
20 40 60 80 100 120
导通状态电压 VON (V)
环境温度 Ta (°C)
z输出导通电阻-环境温度
G3VM-31QVH/31QVL/61QVH/61QV2H/61QV2L
z动作电压-环境温度
G3VM-31QVH/31QVL/61QVH/61QV2H/61QV2L
RON - Ta
VFON-Ta
(平均值)
(平均值)
3
2.5
2
2.0
1.5
IO= 连续负载电流额定值。 t<1 s
(G3VM-31QVH/-61QVH/-61QV2H),VIN=5 V
(G3VM-31QVL/-61QV2L), VIN=2 V
IO= 100 mA, t<1 s
G3VM-61QVH
G3VM-61QVH
1.5
1
1.0
0.5
G3VM-61QV2H/-61QV2L
G3VM-31QVH/-31QVL
G3VM-31QVH/61QV2H
0.5
0
G3VM-31QVL/-61QV2L
-40 -20
0
20 40 60 80 100 120
0
-40 -20
0
20
40
60 80
100 120
环境温度 Ta (°C)
环境温度 Ta (°C)
z动作、复位时间-输入正向电压
G3VM-31QVL/61QV2L
G3VM-31QVH/61QVH/61QV2H
t
ON, tOFF - VIN
tON, tOFF - VIN
(平均值)
(平均值)
10000
1000
100
10000
1000
100
VDD=20 V
RL=200 Ω Ta=25℃
VDD=20 V
RL=200 Ω Ta=25℃
G3VM-31QVH
G3VM-61QV2H
t
ON
tON
G3VM-
31QVL
tOFF
tOFF
G3VM-61QV2L
G3VM-61QVH
10
10
1
10
1
10
正向输入电压 VIN (V)
正向输入电压 VIN (V)
S
I
z动作、复位时间-环境温度
G3VM-31QVL/61QV2L
V
S
G3VM-31QVH/61QVH/61QV2H
ON, tOFF - Ta
O
N
tON, tOFF - Ta
t
(平均值)
(L)
(平均值)
10000
1000
100
10000
1000
100
VDD=20 V RL= 200 Ω
VIN=5 V
VDD=20 V RL= 200 Ω
VIN=2 V
G
3
G3VM-61QV2H
G3VM-31QVH
G3VM-31QVL
t
ON
t
ON
V
M
3
1
Q
V
□
/
t
OFF
t
OFF
G3VM-61QVH
G3VM-61QV2L
10
10
-40 -20
0
20 40 60 80 100 120
6
-40 -20
0
20 40 60 80 100 120
环境温度 Ta (°C)
环境温度 Ta (°C)
1
Q
V
□
□
3