Datasheet > G1AS

G1AS

更新时间： 2024-03-03 10:09:00

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	229K
描述
SOD-123FL

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

G1AS 数据手册

G1AS THRU G1MS

Thermal Characteristics （T =25℃ Unless otherwise specified）

■

PARAMETER

SYMBOL

G1AS

G1BS

G1DS

G1GS

G1JS

G1KS

G1MS

UNIT

(1)

θJ-A

(1)

θJ-L

Typical Thermal resistance

℃/W

(1)

θJ-C

Note：

（1）Thermal resistance between junction and ambient and between junction and lead mounted on P.C.B with 3mm*3mm

copper pad areas

Characteristics(Typical)

■

FIG.1: Io-TL Curve

FIG.2: Forward Surge Current Capability

1.0

0.8

0.6

0.4

0.2

8.3ms Single Half Sine Wave

JEDEC Method

100

40 60

8 10

100

150

Number of Cycles

Lead Temperature (℃)

FIG.3: Typical Forward Voltage

FIG.4: Typical Reverse Characteristics

100

1000

100

Tj=125℃

1.0

0.1

0.01

1.0

Tj=25℃

0.1

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Percent of Rated Peak Reverse Voltage (%)

100

Instantaneous Forward Voltage (V)

2 / 4

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-S2096

Rev.1.3,26-Nov-21

www.21yangjie.com

123 4

下载PDF

与G1AS相关器件

型号	品牌	描述	获取价格	数据表
G1B	VISHAY	GLASS PASSIVATED JUNCTION RECTIFIER	获取价格
G1B	YANGJIE	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon,	获取价格
G1B-E3/54	VISHAY	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS, G-	获取价格
G1BF	YANGJIE	SMAF	获取价格
G1BF2	YANGJIE	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon,	获取价格
G1BF3	YANGJIE	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon,	获取价格