Datasheet > G11777_15

G11777_15

更新时间： 2022-02-26 14:43:29

品牌	Logo	应用领域
HAMAMATSU		/
页数	文件大小	规格书
4页	626K
描述
InGaAs PIN photodiode

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G11777_15 数据手册

InGaAs PIN photodiode

G11777-003P

Linearity

Dark current vs. ambient temperature

(Typ. VR=5 V)

(Typ. Ta=25 °C, λ=1.55 µm, R^L=2 Ω, VR=1 V)

100 nA

102

100

10 nA

Light spot size: 200 µm

1 nA

100 pA

10 pA

1 pA

Light spot size: 50 µm

-40

-20

100

Ambient temperature (°C)

Incident light level (mW)

KIRDB0475EA

KIRDB0476EA

Recommended solder reflow condition

Ĵıı

Peak temperature 250 °C max.

ĳĶı

ĳıı

ĲĶı

Ĳıı

Ķı

Ĳıı ĲĶı ĳıı ĳĶı Ĵıı ĴĶı ĵıı

Time (s)

· After unpacking, store this device in an environment at a

temperature from 5 to 30 °C and a humidity below 60%, and

perform reflow soldering on this device within 72 hours.

· Thermal stress applied to the device during reflow soldering

differs depending on the PC boards and reflow oven being used.

· When setting the reflow conditions, make sure that the reflow

soldering process does not degrade device reliability.

KIRDB0470EA

1 234

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