FZ900R12KP4

更新时间： 2024-10-04 10:22:55

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管双极性晶体管
页数	文件大小	规格书
8页	279K
描述
62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled4 diode

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Technische Information / technical information

IGBT-Module

IGBT-modules

FZ900R12KP4

62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode

62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled4 diode

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

I† ÒÓÑ

I†ç¢

PÚÓÚ

1200

900

Kollektor-Dauergleichstrom

T† = 95°C, TÝÎ = 175°C

DC-collector current

Periodischer Kollektor Spitzenstrom

t« = 1 ms

1800

4300

+/-20

repetitive peak collector current

Gesamt-Verlustleistung

T† = 25°C, TÝÎ = 175°C

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 900 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C V†Š ÙÈÚ

TÝÎ = 150°C

1,70 2,05

2,00

2,10

Gate-Schwellenspannung

gate threshold voltage

I† = 32,0 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

V•ŠÚÌ

Q•

5,2

5,8

7,40

0,9

6,4

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

56,0

2,20

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0 mA

400 nA

Gate-Emitter Reststrom

gate-emitter leakage current

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 900 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 1,5 Â

TÝÎ = 25°C

tÁ ÓÒ

0,24

0,25

0,26

µs

TÝÎ = 125°C

TÝÎ = 150°C

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 900 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 1,5 Â

TÝÎ = 25°C

tØ

0,09

0,10

0,11

µs

TÝÎ = 125°C

TÝÎ = 150°C

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 900 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 0,9 Â

TÝÎ = 25°C

tÁ ÓËË

0,61

0,64

0,66

µs

TÝÎ = 125°C

TÝÎ = 150°C

Fallzeit (induktive Last)

fall time (inductive load)

I† = 900 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 0,9 Â

TÝÎ = 25°C

tË

0,14

0,17

0,18

µs

TÝÎ = 125°C

TÝÎ = 150°C

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 900 A, V†Š = 600 V, L» = 60 nH TÝÎ = 25°C

V•Š = ±15 V, di/dt = 6000 A/µs (TÝÎ=150°C) TÝÎ = 125°C

40,0

55,0

60,0

EÓÒ

EÓËË

R•ÓÒ = 1,5 Â

TÝÎ = 150°C

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 900 A, V†Š = 600 V, L» = 60 nH TÝÎ = 25°C

V•Š = ±15 V, du/dt = 3000 V/µs (TÝÎ=150°C) TÝÎ = 125°C

110

160

175

R•ÓËË = 0,9 Â

TÝÎ = 150°C

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 900 V

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

t« ù 10 µs, TÝÎ = 150°C

3600

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

RÚÌœ†

RÚÌ†™

0,035 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

0,016

K/W

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Martin Knecht

date of publication: 2009-02-13

revision: 2.0

approved by: Wilhelm Rusche

12 3 4 5 6 7 8

中文翻译

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