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FY10AAJ-03 PDF预览

FY10AAJ-03

更新时间: 2024-09-26 22:05:11
品牌 Logo 应用领域
三菱 - MITSUBISHI 开关
页数 文件大小 规格书
4页 41K
描述
HIGH-SPEED SWITCHING USE

FY10AAJ-03 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.72
最小漏源击穿电压:30 V最大漏极电流 (ID):10 A
最大漏源导通电阻:0.0135 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

FY10AAJ-03 数据手册

 浏览型号FY10AAJ-03的Datasheet PDF文件第2页浏览型号FY10AAJ-03的Datasheet PDF文件第3页浏览型号FY10AAJ-03的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FY10AAJ-03A  
HIGH-SPEED SWITCHING USE  
FY10AAJ-03A  
OUTLINE DRAWING  
Dimensions in mm  
1.8 MAX.  
5.0  
0.4  
1.27  
➄➅➆➇  
SOURCE  
GATE  
DRAIN  
➀ ➁➂  
➄➅➆➇  
4V DRIVE  
VDSS .................................................................................. 30V  
rDS (ON) (MAX) .......................................................... 13.5m  
ID .........................................................................................10A  
➀ ➁➂  
SOP-8  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
30  
±20  
10  
V
A
IDM  
IDA  
Drain current (Pulsed)  
70  
A
Avalanche drain current (Pulsed) L = 10µH  
Source current  
10  
A
IS  
2.3  
9.2  
2.0  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
A
PD  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
0.07  
Tstg  
Storage temperature  
Weight  
Typical value  
Sep.1998  

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