Datasheet > FX852

FX852

更新时间： 2024-01-20 06:23:26

品牌	Logo	应用领域
三洋 - SANYO		晶体转换器晶体管开关光电二极管
页数	文件大小	规格书
4页	137K
描述
DC-DC Converter Applications

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技术参数
数据手册

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FX852 技术参数

生命周期：	Obsolete	包装说明：	FLATPACK, R-PDFP-F6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	2 A
最大漏源导通电阻：	0.38 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDFP-F6	元件数量：	1
端子数量：	6	工作模式：	DEPLETION MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLATPACK	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FX852 数据手册

Ordering number:EN4892

FX852

MOSFET:N-Channel Silicon MOSFET

SBD:Schottky Barrier Diode

DC-DC Converter Applications

Features

Package Dimensions

unit:mm

· Composite type composed of a low ON-resistance N-

channel MOSFET for ultrahigh-speed switching and

low-voltage driving and a fast-recovery, low forward

-voltage Schottky barrier diode. Facilitates high-

density mounting.

2119

[FX852]

· The FX852 is formed with 2 chips, one being

equivalent to the 2SK1467 and the other the SB07-

03P, placed in one package.

1:Gate

2:Source

3:No connection

4:Anode

Electrical Connection

1:Gate

2:Source

3:No connection

4:Anode

5:Cathode

6:Drain

5:Cathode

6:Drain

SANYO:XP6

(Bottom view)

(Top view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

±15

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

PW≤10µs, duty cycle≤1%

˚C

Tc=25˚C

Mounted on ceramic board (750mm²×0.8mm)

1.5

150

Channel Temperature

Tch

Storage Temperature

Tstg

–55 to +150

[SBD]

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Surge Voltage

Average Rectified Current

Surge Forward Current

Junction Temperature

RRM

700

RSM

50Hz sine wave, 1 cycle

FSM

–55 to +125

–55 to +150

˚C

Storage Temperature

Tstg

Continued on next page.

· Marking:852

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/71095MO (KOTO) TA-0117 No.4892-1/4

12 3 4

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