Datasheet > FX855

FX855

更新时间： 2024-02-18 07:16:49

品牌	Logo	应用领域
三洋 - SANYO		晶体转换器晶体管开关脉冲光电二极管
页数	文件大小	规格书
4页	137K
描述
DC-DC Converter Applications

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技术参数
数据手册

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FX855 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84
Is Samacsys：	N	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	2 A	最大漏极电流 (ID)：	2 A
最大漏源导通电阻：	0.6 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-F6	元件数量：	1
端子数量：	6	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.5 W	最大脉冲漏极电流 (IDM)：	8 A
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FX855 数据手册

Ordering number:EN4895

FX855

MOSFET:N-Channel Silicon MOSFET

SBD:Schottky Barrier Diode

DC-DC Converter Applications

Features

Package Dimensions

unit:mm

· Composite type composed of a ow ON-resistance N-

channel MOSFET for ultrahigh-speed switching and

low-voltage driving and a fast-recovery, low forward

-voltage Schottky barrier diode. Facilitates high-

density mounting.

2119

[FX855]

· The FX855 is formed with 2 chips, one being

equivalent to the 2SK1470 and the other the SB05-

09, placed in one package.

1:Gate

2:Source

3:No connection

4:Anode

Electrical Connection

1:Gate

2:Source

5:Cathode

6:Drain

3:No connection

4:Anode

5:Cathode

6:Drain

SANYO:XP6

(Bottom view)

(Top view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

±15

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

PW≤10µs, duty cycle≤1%

˚C

Tc=25˚C

Mounted on ceramic board (750mm²×0.8mm)

1.5

150

Channel Temperature

Tch

Storage Temperature

Tstg

–55 to +150

[SBD]

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Surge Voltage

Average Rectified Current

Surge Forward Current

Junction Temperature

RRM

RSM

500

50Hz sine wave, 1cycle

FSM

–55 to +125

˚C

Storage Temperature

Tstg

Continued on next page.

· Marking:855

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/71095TS (KOTO) TA-0115 No.4895-1/4

12 3 4

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