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FW811-TL-E

更新时间： 2024-02-15 04:17:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 297K
描述
Power MOSFET 35V 8.0A 24 mOhm Dual N-Channel SOP8, 1000-REEL

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中文翻译

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FW811-TL-E 技术参数

是否无铅： 不含铅生命周期：Lifetime Buy
Reach Compliance Code：not_compliant风险等级：5.72
Base Number Matches：1

FW811-TL-E 数据手册

 浏览型号FW811-TL-E的Datasheet PDF文件第2页浏览型号FW811-TL-E的Datasheet PDF文件第3页浏览型号FW811-TL-E的Datasheet PDF文件第4页 
Ordering number : ENA1570  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
FW811  
Features  
•
4V drive.  
•
Composite type, facilitating high-density mounting.  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
35  
±20  
8
DSS  
V
V
GSS  
I
A
D
Drain Current (PW 10s)  
I
D
Duty cycle 1%  
9
A
≤
≤
Drain Current (PW 10 s)  
I
Duty cycle 1%  
When mounted on ceramic substrate (2000mm2 0.8mm) 1unit, PW 10s  
When mounted on ceramic substrate (2000mm2 0.8mm), PW 10s  
52  
A
≤
μ
≤
DP  
Allowable Power Dissipation  
Total Dissipation  
P
P
2.0  
2.2  
150  
W
W
°C  
°C  
×
≤
D
T
×
≤
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
35  
(BR)DSS  
D
GS  
I
V
=35V, V =0V  
1
±10  
2.6  
A
A
μ
DSS  
DS GS  
I
V
=±16V, V =0V  
μ
GSS  
GS DS  
V
(off)  
|
V
=10V, I =1mA  
1.2  
2.7  
V
GS  
yfs  
DS D  
Forward Transfer Admittance  
V
I
=10V, I =8A  
D
4.5  
18  
S
|
DS  
R
R
R
(on)1  
(on)2  
(on)3  
=8A, V =10V  
GS  
24  
41  
55  
m
Ω
Ω
Ω
DS  
DS  
DS  
D
Static Drain-to-Source On-State Resistance  
I
D
=4A, V =4.5V  
GS  
29  
39  
m
m
I
D
=4A, V =4V  
GS  
Marking : W811  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
www.semiconductor-sanyo.com/network  
No. A1570-1/4  
D2409PA TK IM TC-00002070  
1234

中文翻译

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