Datasheet > FW813

FW813

更新时间： 2024-02-22 07:58:13

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
4页	337K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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FW813 数据手册

FW813

Ordering number : ENA1884

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

FW813

Features

•

ON-resistance R (on)1=39m (typ.)

4V drive

Nch + Nch MOSFET

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

±20

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

PW 10 s, duty cycle 1%

When mounted on ceramic substrate (2000mm²0.8mm) 1unit, PW 10s

When mounted on ceramic substrate (2000mm²0.8mm), PW 10s

≤

2.3

2.5

150

°C

≤

Channel Temperature

Storage Temperature

Tch

Tstg

--55 to +150

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: SOP8

7005A-003

• JEITA, JEDEC

: SC-87, SOT96

• Minimum Packing Quantity : 1,000 pcs./reel

5.0

0.2

Packing Type : TL

Marking

0.1

W813

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

LOT No.

1.27

0.43

Electrical Connection

SANYO : SOP8

http://semicon.sanyo.com/en/network

No. A1884-1/4

D0810PA TKIM TC-00002348

12 3 4

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