Datasheet > FTC3876

FTC3876

更新时间： 2022-06-24 15:41:22

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描述
General Purpose Transistors

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FTC3876 数据手册

SEMICONDUCTOR

FTC3876

TECHNICAL DATA

General Purpose Transistors

NPN Silicon

We declare that the material of product compliance with RoHS requirements.

•

Purpose: General amplifier and switching application.

Features: Excellent h_FElinearity, complementary pair with FTA1505.

Absolute maximum ratings(Ta=25℃)

Symbol

Rating

Unit

V_CBO

V_CEO

V_EBO

I_C

SOT– 23

5.0

500

℃

I_B

COLLECTOR

P_C

150

T_j

BASE

T_stg

-55～150 ℃

EMITTER

Electrical characteristics(Ta=25℃)

Rating

Typ

Symbol

Test condition

Unit

Min

Max

I_CBO

V_CB=35V

I_E=0

0.1

400

μA

I_EBO

V_EB=5.0V

V_CE=1.0V

V_CE=6.0V

I_C=100mA

V_CE=1.0V

V_CE=6.0V

I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

I_C=100mA

I_C=400mA

I_B=10mA

I_C=100mA

I_C=20mA

0.1

0.8

300

7.0

0.25

1.0

f_T

MHz

C_ob

V_CB=6.0V I_E=0 f=1.0MHz

h_FE(1)classifications、Marking：

h_FE(1)Classifications

h_FE(1)Range

70～140

HWO

120～240

200～400

Marking

HWY

HWG

2014. 01. 18

Revision No : 0

1/3

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