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FSA2267L10X_NL PDF预览

FSA2267L10X_NL

更新时间: 2024-01-14 03:11:58
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管
页数 文件大小 规格书
14页 1489K
描述
SPDT, 2 Func, 1 Channel, CMOS, 1.60 X 2.10 MM, LEAD FREE, MO-255UABD, MICROPAK-10

FSA2267L10X_NL 技术参数

生命周期:Obsolete零件包装代码:QFN
包装说明:VQCCN,针数:10
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.79模拟集成电路 - 其他类型:SPDT
JESD-30 代码:R-XQCC-N10JESD-609代码:e4
长度:2.1 mm负电源电压最大值(Vsup):-6 V
负电源电压最小值(Vsup):标称负供电电压 (Vsup):-4.5 V
信道数量:1功能数量:2
端子数量:10标称断态隔离度:44 dB
通态电阻匹配规范:0.04 Ω最大通态电阻 (Ron):0.75 Ω
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装代码:VQCCN
封装形状:RECTANGULAR封装形式:CHIP CARRIER, VERY THIN PROFILE
认证状态:Not Qualified座面最大高度:0.55 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):2.3 V表面贴装:YES
最长断开时间:18 ns最长接通时间:37 ns
技术:CMOS温度等级:INDUSTRIAL
端子面层:NICKEL GOLD端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
宽度:1.6 mmBase Number Matches:1

FSA2267L10X_NL 数据手册

 浏览型号FSA2267L10X_NL的Datasheet PDF文件第1页浏览型号FSA2267L10X_NL的Datasheet PDF文件第2页浏览型号FSA2267L10X_NL的Datasheet PDF文件第3页浏览型号FSA2267L10X_NL的Datasheet PDF文件第5页浏览型号FSA2267L10X_NL的Datasheet PDF文件第6页浏览型号FSA2267L10X_NL的Datasheet PDF文件第7页 
ESD Protection  
ESD Performance of the FSA2267/FSA2267A  
FSA2267  
HBM all pins 7.0kV  
CDM all pins 1.0kV  
FSA2267A  
HBM all pins 7.5kV  
CDM all pins 1.0kV  
Figure 5. Human Body ESD Test Model  
Human Body Model  
Figure 5 shows the schematic representation of the  
Human Body Model ESD event. Figure 6 is the ideal  
waveform representation of the Human Body Model. The  
device is tested to JEDEC: JESD22-A114 Human Body  
Model.  
Charged Device Model  
In manufacturing test and handling environments, a  
more useful model is the Charged Device Model and the  
FSA2267/FSA2267A has a very good ESD immunity to  
this model. The device is tested to JEDEC: JESD22-  
C101 Charged Device Model.  
Figure 6. HBM Current Waveform  
IEC 61000-4-2  
The IEC 61000-4-2 standard covers ESD testing and  
performance of finished equipment and evaluates the  
equipment in its entirety for ESD immunity. Fairchild  
Semiconductor has evaluated this device using the  
IEC 6100-4-2 representative system model depicted in  
Figure 7.  
ESD values measured via the IEC 61000-4-2 evaluation  
method are influenced by the specific board layout,  
board size, and many other factors of the manufacturer’s  
product application. Measured system ESD values can-  
not be guaranteed by Fairchild Semiconductor to exactly  
correlate to a manufacturer’s in-house testing due to  
these application environment variables. Fairchild Semi-  
conductor has been able to determine that, for ultra-por-  
table applications, an enhanced ESD immunity, relative  
to the IEC 61000-4-2 specification, can be achieved with  
the inclusion of a 100Ω−series resistor in the VCC supply  
path to the analog switch (see Figure 8). Typical  
improvements of between 3-6kV of ESD immunity (I/O to  
GND) have been measured with the inclusion of the  
resistor with the IEC 61000-4-2 representative model.  
For more information on ESD testing methodologies,  
please refer to:  
Figure 7. IEC 61000-4-2 ESD Test Model  
Analog Switch Supply Rail  
100  
VCC  
1A  
1B0  
1B1  
2B0  
2B1  
AN-6019 Fairchild Analog Switch Products ESD Test  
Methodology Overview  
http://www.fairchildsemi.com/an/AN/AN-6019.pdf.  
ESD Event  
1S  
2A  
2S  
Additional ESD Test Conditions  
For information regarding test methodologies and perfor-  
mance levels, please contact Fairchild Semiconductor.  
Ultra-portable Connector  
Figure 8. ESD Immunity with 100Ω Resistor  
© 2005 Fairchild Semiconductor Corporation  
FSA2267 / FSA2267A Rev. 1.0.4  
www.fairchildsemi.com  
4

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