FRM9230D, FRM9230R,
FRM9230H
4A, -200V, 1.30 Ohm, Rad Hard,
P-Channel Power MOSFETs
June 1998
Features
Package
• 4A, -200V, RDS(on) = 1.30Ω
TO-204AA
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 3nA Per-RAD(Si)/sec Typically
2
• Neutron
- Pre-RAD Specifications for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
Description
Symbol
The Harris Semiconductor Sector has designed a series of SECOND GENERA-
TION hardened power MOSFETs of both N and P channel enhancement types
with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.
Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron
hardness ranging from 1E13n/cm for 500V product to 1E14n/cm for 100V prod-
uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current lim-
iting and 2E12 with current limiting.
2
2
D
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )
G
o
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
S
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
o
Absolute Maximum Ratings (TC = +25 C) Unless Otherwise Specified
FRM9230D, R, H
UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
-200
-200
V
V
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
4
2
12
±20
A
A
A
V
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
75
30
0.60
W
W
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
o
o
Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W/ C
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
12
4
12
A
A
A
o
-55 to +150
C
o
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 3263.2
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19994-1
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