Datasheet > FR10B

FR10B

更新时间： 2024-09-28 12:57:31

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	521K
描述
10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes

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中文翻译

获取价格

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FR10B 数据手册

FR10A thru FR10M

Pb Free Plating Product

10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes

Unit:inch(millimeter)

Features

OUTLINE

ꢀ

For surface mounted application

Low profile package

Cathode Band

Built-in strain relief

Ideal for automated placement

Easy pick and place

Fast recovery time for high efficiency

Plastic material used carries Underwriters

Laboratory Classification 94V-0

ꢀ

DIMENSIONS

INCHES

MIN

Mechanical Data

DIM

MAX

.214

0.203

0.005

0.02

0.056

0 .179

0.322

0.243

0.240

MIN

5.08

4.70

0.05

---

1.20

4.27

7.85

6.08

5.95

MAX

5.43

5.30

0.13

0.51

1.42

4.55

8.18

6.18

6.10

NOTE

.200

.177

Cases: HSMC(Round Lead)/SME Pkg

ꢀ

0.002

---

0.047

0.168

0.309

0.239

0.234

ꢀ

Terminals: Pure tin plated, lead free.

Polarity: Indicated by cathode band

Packing: Tape&Reel

HSMC/SMC-W/SMCE

Weight: 0.093 gram approximately

Maximum Ratings and Electrical Characteristics

Rating at 25

ambient temperature unless otherwise specified.

℃

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

Type Number

FS10A FS10B FS10D FS10G FS10J FS10K FS10M

Units

Maximum Recurrent Peak Reverse

Voltage

V_RRM

100

200 400

600 800 1000

420 560 700

600 800 1000

Maximum RMS Voltage

140 280

200 400

V_RMS

V_DC

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified

Current See Fig. 1

10.0

300

1.3

I_(AV)

I_FSM

V_F

Peak Forward Surge Current, 8.3 ms

Single Half Sine-wave Superimposed on

Rated Load (JEDEC method )

Maximum Instantaneous Forward Voltage

@ 8.0A

Maximum DC Reverse Current

@T_A=25 C at Rated DC Blocking Voltage

I_R

@ T_A=100 C

Maximum Reverse Recovery Time

( Note 1 )

Trr

150

250

500

Typical Junction Capacitance ( Note 2 )

Maximum Thermal Resistance (Note 3)

R_θJA

℃/W

θJL

Operating Temperature Range

Storage Temperature Range

℃

T_J

-55 to +150

T^STG

1. Reverse Recovery Test Conditions: I^F=0.5A, I^R=1.0A, I^RR=0.25A

2. Measured at 1 MHz and Applied V^R=4.0 Volts

Notes:

3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas

Page 1/2

http://www.thinkisemi.com/

Rev.07C

中文翻译

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与FR10B相关器件

型号	品牌	获取价格	描述	数据表
FR10BP	MCC	获取价格	DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, PLASTIC, HSMC, 2 PIN, Rectifier Dio
FR10B-TP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, DO-214AB, PLASTIC, HSMC, 2
FR10B-TP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, DO-214AB, HSMC, 2 PIN
FR10C03CF	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C03CFA	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C03CFD	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C03CFS	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C04CF	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C04CFA	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C04CFD	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers

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