生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.67 | 雪崩能效等级(Eas): | 55 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (ID): | 9.3 A | 最大漏源导通电阻: | 0.23 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 37.2 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP9N15 | FAIRCHILD |
获取价格 |
150V N-Channel MOSFET | |
FQP9N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQP9N25C | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQP9N25CTSTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
FQP9N25J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 9.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Me | |
FQP9N30 | FAIRCHILD |
获取价格 |
300V N-Channel MOSFET | |
FQP9N30 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®, 300 V,9 A,450 mΩ,TO-220 | |
FQP9N30J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 300V, 0.45ohm, 1-Element, N-Channel, Silicon, Meta | |
FQP9N50 | FAIRCHILD |
获取价格 |
500V N-Channel MOSFET | |
FQP9N50C | FAIRCHILD |
获取价格 |
500V N-Channel MOSFET |