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FPN330AD75Z PDF预览

FPN330AD75Z

更新时间: 2023-07-15 00:00:00
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 440K
描述
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE

FPN330AD75Z 数据手册

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FPN330  
FPN330A  
TO-226  
C
B
E
NPN Low Saturation Transistor  
These devices are designed for high current gain and low  
saturation voltage with collector currents up to 3.0 A continuous.  
Sourced from Process NB.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
30  
50  
V
V
V
A
5.0  
Collector Current  
- Continuous  
3.0  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
FPN330 / FPN330A  
PD  
Total Device Dissipation  
1.0  
W
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
50  
RθJC  
RθJA  
°C/W  
°C/W  
125  
1999 Fairchild Semiconductor Corporation  

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