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FP806 PDF预览

FP806

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
DAESAN /
页数 文件大小 规格书
2页 321K
描述
CURRENT 8.0 Amperes VOLTAGE 50 to 1000 Volts

FP806 数据手册

 浏览型号FP806的Datasheet PDF文件第2页 
CURRENT 8.0 Amperes  
VOLTAGE 50 to 1000 Volts  
FP801 THRU FP807  
Features  
· Fast switching  
· Low leakage  
· Low forward voltage drop  
· High current capability  
· High current surge  
· High reliability  
ITO-220A  
0.2  
2.7  
0.5  
3.2  
4.5  
10  
0.2  
1.3  
Mechanical Data  
0.2  
0.7  
0.5  
2.4  
5.08  
· Case : JEDEC ITO-220A molded plastic body  
· Terminals : Lead solderable per  
MIL-STD-750, method 2026  
· Polarity : As marked  
· Mounting Position : Any  
PIN 1+  
PIN 2  
PIN 1  
PIN 2+  
Case Negative  
+
CASE  
CASE  
CasePositive  
Suffix"R"  
· Weight : 0.08 ounce, 2.24 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
FP  
801  
FP  
802  
FP  
803  
FP  
804  
FP  
805  
FP  
806  
FP  
807  
Symbols  
Units  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
V
Maximum DC blocking voltage  
V
DC  
100  
1000  
Maximum average forward rectified current  
at TC=55℃  
Amps  
Amps  
I
(AV)  
8.0  
150  
1.3  
Peak forward surge current 8.3ms single  
half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
Maximum instantaneous forward voltage  
at 8.0A  
VF  
Volts  
T
C
=25℃  
10  
Maximum DC reverse current  
at rated DC blocking voltage  
IR  
μA  
TC  
=125℃  
100  
Maximum reverse recovery time (Note 1)  
Trr  
150  
250  
500  
ns  
pF  
CJ  
Typical junction capacitance (Note 2) T  
J
=25℃  
60  
Typical thermal resistance (Note 3)  
5.0  
/W  
RθJC  
Operating junction and storage  
temperature range  
T
J
-55 to +150  
TSTG  
Notes:  
(1) Test conditions: IF=0.5A, IR=1.0A, Irr=0.25A.  
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.  
(3) Thermal resistance from junction to case, single side cooled.  

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