FP2189
1 - Watt HFET
Product Information
Product Features
· 50 – 4000 MHz
Product Description
Functional Diagram
GND
The FP2189 is
a
high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +43 dBm output IP3
performance and an output power of +30 dBm at 1-dB
compression, while providing 18.5 dB gain at 900 MHz.
4
· +30 dBm P1dB
· +43 dBm Output IP3
· High Drain Efficiency
· 18.5 dB Gain @ 900 MHz
1
2
3
The device conforms to WJ Communications’ long history
of producing high reliability and quality components. The
FP2189 has an associated MTTF of greater than 100 years
at a mounting temperature of 85°C and is available in both
the standard SOT-89 package and the environmentally-
friendly lead-free/green/RoHS-compliant and green SOT-
89 package. All devices are 100% RF & DC tested.
· Lead-free/Green/RoHS-
compliant SOT-89 Package
RF IN
GND
RF OUT
· MTTF >100 Years
Function
Input / Gate
Output / Drain
Ground
Pin No.
1
3
2, 4
Applications
· Mobile Infrastructure
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
· CATV / DBS
· W-LAN / ISM
· RFID
· Defense / Homeland Security
· Fixed Wireless
Specifications
Typical Performance(5)
DC Parameter
Saturated Drain Current, Idss
Transconductance, Gm
Pinch Off Voltage, V
Units Min Typ Max
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (4)
Noise Figure
Units
MHz
dB
dB
dB
Typical
1960 2140 2450
(1)
mA
mS
V
445
615
280
-2.1
705
915
18.7
21
15.6
14.6
12
14.4 13.0
23
11.5
(2)
26
9.6
p
8.3
RF Parameter (3)
Frequency Range
Units Min Typ Max
dBm +30.2 +30.4 +30.6 +31.2
dBm +42.8 +43.5 +43.9 +45.3
dB
MHz
50 - 4000
4.5
3.4
4.5
Test Frequency
Small Signal Gain
SS Gain (50 W, unmatched)
Maximum Stable Gain
Output P1dB
Output IP3 (4)
Noise Figure
MHz
dB
800
18.5
IS-95 Channel Power
dBm +24.5 +23.8
@ -45 dBc ACPR
dB
15
21
W-CDMA Ch. Power
+22.2
@ -45 dBc ACLR
dB
24
+8
250
Drain Voltage
Drain Current
V
mA
dBm
dBm
dB
+30
+43
4.5
5. Typical parameters represent performance in a tuned application circuit.
Drain Bias
+8V @ 250 mA
1. Idss is measured with Vgs = 0 V, Vds = 3 V.
2. Pinch-off voltage is measured when Ids = 2.4 mA.
3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 250 mA in an application circuit
with ZL = ZLOPT, ZS = ZSOPT (optimized for output power).
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Ordering Information
Absolute Maximum Rating
Part No.
FP2189
Description
Parameter
Rating
-40 to +85 °C
-55 to +125 °C
4.0 W
1 -Watt HFET
(leaded SOT-89 Pkg)
1 -Watt HFET
Operating Case Temperature
Storage Temperature
DC Power
FP2189-G
(lead-free/green/RoHS-compliant SOT-89 Pkg)
RF Input Power (continuous)
6 dB above Input P1dB
+14 V
+220° C
FP2189-PCB900S
FP2189-PCB1900S
FP2189-PCB2140S
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Drain to Gate Voltage, V
dg
Junction Temperature
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
September 2004
WJ Communications, Inc · Phone 1-800- WJ1-4401 · FAX: 408-577-6621 · e- mail: sales@wj.com · Web site: www.wj.com
5秒后页面跳转
STM32H743技术深度剖析与应用案例探索
LM321中文资料解析：引脚功能介绍、技术特点、技术特性分析
74HC14芯片资料介绍：性能特性分析、引脚介绍
LM1875芯片手册：功放参数分析、引脚说明、电路设计要点
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
