Datasheet > FN4819.1

FN4819.1

更新时间： 2024-09-27 22:09:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		驱动器
页数	文件大小	规格书
8页	87K
描述
Synchronous-Rectified Buck MOSFET Drivers

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FN4819.1 数据手册

HIP6601, HIP6603

Data Sheet

January 2000

File Number 4819

Synchronous-Rectiﬁed Buck MOSFET

Drivers

Features

• Drives Two N-Channel MOSFETs

The HIP6601 and HIP6603 are high frequency, dual

MOSFET drivers speciﬁcally designed to drive two power

N-Channel MOSFETs in a synchronous-rectiﬁed buck

converter topology. These drivers combined with a HIP630x

Multi-Phase Buck PWM controller and Intersil UltraFETs™

form a complete core-voltage regulator solution for

advanced microprocessors.

• Adaptive Shoot-Through Protection

• Internal Bootstrap Device

• Supports High Switching Frequency

- Fast Output Rise Time

- Propagation Delay 30ns

• Small 8 Lead SOIC Package

The HIP6601 drives the lower gate in a synchronous-rectiﬁer

bridge to 12V, while the upper gate can be independently

driven over a range from 5V to 12V. The HIP6603 drives

both upper and lower gates over a range of 5V to 12V. This

drive-voltage ﬂexibility provides the advantage of optimizing

applications involving trade-offs between switching losses

and conduction losses.

• Dual Gate-Drive Voltages for Optimal Efﬁciency

• Three-State Input for Bridge Shutdown

• Supply Under Voltage Protection

Applications

• Core Voltage Supplies for Intel Pentium® III, AMD®

Athlon™ Microprocessors

The output drivers in the HIP6601 and HIP6603 have the

capacity to efﬁciently switch power MOSFETs at frequencies

up to 2MHz. Each driver is capable of driving a 3000pF load

with a 30ns propagation delay and 50ns transition time. Both

products implement bootstrapping on the upper gate with

only an external capacitor required. This reduces

implementation complexity and allows the use of higher

performance, cost effective, N-Channel MOSFETs. Adaptive

shoot-through protection is integrated to prevent both

MOSFETs from conducting simultaneously.

• High Frequency Low Proﬁle DC-DC Converters

• High Current Low Voltage DC-DC Converters

Pinout

HIP6601CB/HIP6603CB

(SOIC)

TOP VIEW

UGATE

BOOT

PWM

PHASE

PVCC

VCC

Ordering Information

TEMP. RANGE

PART NUMBER

HIP6601CB

( C)

PACKAGE

8 Ld SOIC

PKG. NO.

M8.15

GND

LGATE

0 to 85

HIP6603CB

M8.15

Block Diagram

PVCC

BOOT

UGATE

PHASE

VCC

+5V

10K

SHOOT-

THROUGH

PROTECTION

† VCC FOR HIP6601

PVCC FOR HIP6603

†

PWM

CONTROL

LOGIC

LGATE

GND

10K

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Pentium® is a registered trademark of Intel Corporation. AMD® is a registered trademark of Advanced Micro Devices, Inc.

12 3 4 5 6 7 8

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与FN4819.1相关器件

型号	品牌	获取价格	描述	数据表
FN4871	INTERSIL	获取价格	Multiple Linear Power Controller with ACPI Control Interface
FN4A3Q	NEC	获取价格	RESISTOR BUILT-IN TYPE PNP TRANSISTOR
FN4A3Q-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59,
FN4A3Q-T1B	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FN4A3Q-T1B-A	RENESAS	获取价格	Built-in Resistor Bipolar Transistors, MM, /
FN4A4L	NEC	获取价格	RESISTOR BUILT-IN TYPE PNP TRANSISTOR
FN4A4L-A	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59,
FN4A4L-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
FN4A4M	NEC	获取价格	RESISTOR BUILT-IN TYPE PNP TRANSISTOR
FN4A4M-A	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59,

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