Datasheet > FMV30N60S1

FMV30N60S1

更新时间： 2025-09-18 17:01:07

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	695K
描述
TO-220F(SLS)

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数据手册

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FMV30N60S1 数据手册

http://www.fujielectric.com/products/semiconductor/

FUJI POWER MOSFET

FMV30N60S1

Super J MOS^®S1 series

Features

N-Channel enhancement mode power MOSFET

Outline Drawings [mm]

Equivalent circuit schematic

Pb-free lead terminal

RoHS compliant

TO-220F(SLS)

②Drain

Applications

For switching

①

Gate

①

②

③

③Source

Connection

Gate

Drain

Source

DIMENSIONS ARE IN MILLIMETERS.

Absolute Maximum Ratings at T =25°C (unless otherwise speciﬁed)

Description

Symbol

Characteristics

Unit

Remarks

600

Drain-Source Voltage

DSX

VGS=-30V

±30

Tc=25°C Note*1

Tc=100°C Note*1

Continuous Drain Current

±19

Pulsed Drain Current

±90

Gate-Source Voltage

±30

Repetitive and Non-Repetitive Maximum Avalanche Current

Non-Repetitive Maximum Avalanche Energy

Maximum Drain-Source dV/dt

6.6

Note *2

Note *3

849.2

kV/μs

A/μs

dV^DS/dt

dV/dt

-di/dt

VDS≤ 600V

Peak Diode Recovery dV/dt

Note *4

Note *5

Peak Diode Recovery -di/dt

100

2.16

T =25°C

Maximum Power Dissipation

Tc=25°C

150

°C

Operating and Storage Temperature range

Isolation Voltage

stg

-55 to +150

iso

kVrms

t=60sec,f=60Hz

Note *1 : Limited by maximum channel temperature.

Note *2 : T^ch≤150°C, See Fig.1 and Fig.2

Note *3 : Starting T^ch=25°C, IAS=4A, L=97.3mH, VDD=60V, R

AS limited by maximum channel temperature and avalanche current.

≤-I , -di/dt=100A/μs, VDD≤400V, Tch≤150°C.

≤-I , dV/dt=12kV/μs, VDD≤400V, Tch≤150°C.

=50Ω, See Fig.1 and Fig.2

Note *4 : I

Note *5 : I

Electrical Characteristics at T =25°C (unless otherwise speciﬁed)

• Static Ratings

Description

Symbol

Conditions

min.

typ.

max.

Unit

=250μA

GS=0V

Drain-Source Breakdown Voltage

Gate Threshold Voltage

BV^DSS

600

=250μA

DS=VGS

GS(th)

2.5

3.0

3.5

DS=600V

GS=0V

ch=25°C

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

DSS

μA

DS=480V

GS=0V

Tch=125°C

250

100

GS= ±30V

DS=0V

IGSS

=15A

GS=10V

Drain-Source On-State Resistance

Gate resistance

DS(on)

0.106

3.2

0.125

f=1MHz, open drain

07947a

OCTOBER 2015

12 3 4 5 6 7 8

中文翻译

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