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FM38D16SAB-8KFD PDF预览

FM38D16SAB-8KFD

更新时间: 2024-04-09 18:58:36
品牌 Logo 应用领域
东芯 - DOSILICON /
页数 文件大小 规格书
198页 7247K
描述
FBGA 96(7.5x13x1.2mm)

FM38D16SAB-8KFD 数据手册

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FM38DXXSAX - xxFx  
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)  
The DRAM’s ODT can exhibit either asynchronous or synchronous behavior during power-down exit (PDX).  
This transition period occurs if the DLL is selected to be off when in precharge power-down mode by setting  
MR0[12] to 0. Power-down exit begins tANPD prior to CKE first being registered HIGH, and ends tXPDLL after  
CKE is first registered HIGH. tANPD is equal to the greater of ODTLoff + 1tCK or ODTLon + 1tCK. The  
transition period is tANPD + tXPDLL.  
ODT assertion during power-down exit results in an RTT change as early as the lesser of tAONPD (MIN) and  
ODTLon × tCK + tAON (MIN), or as late as the greater of tAONPD (MAX) and ODTLon × tCK + tAON (MAX).  
ODT de-assertion during power-down exit may result in an RTT change as early as the lesser of tAOFPD (MIN)  
and ODTLoff × tCK + tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff × tCK + tAOF  
(MAX). Table 86 summarizes these parameters.  
If AL has a large value, the uncertainty of the RTT state becomes quite large. This is because ODTLon and  
ODTLoff are derived from WL, and WL is equal to CWL + AL. Figure 107 shows three different cases :  
• ODT C: Asynchronous behavior before tANPD.  
ODT B: ODT state changes during the transition period, with tAOFPD (MIN) < ODTLoff × tCK + tAOF (MIN),  
and ODTLoff × tCK + tAOF (MAX) > tAOFPD (MAX).  
ODT A: ODT state changes after the transition period with synchronous response.  
193  
Rev. 0.2 Feb. ‘17  

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