Datasheet > FM23MLD16

FM23MLD16

更新时间： 2024-02-13 22:47:45

品牌	Logo	应用领域
铁电 - RAMTRON		存储
页数	文件大小	规格书
13页	173K
描述
8Mbit F-RAM Memory

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中文翻译

获取价格

数据手册

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FM23MLD16 数据手册

Preliminary

FM23MLD16

8Mbit F-RAM Memory

Features

Superior to Battery-backed SRAM Modules

8Mbit Ferroelectric Nonvolatile RAM

•

No Battery Concerns

Monolithic Reliability

True Surface Mount Solution, No Rework Steps

Superior for Moisture, Shock, and Vibration

•

Organized as 512Kx16

Configurable as 1Mx8 Using /UB, /LB

High Endurance 100 Trillion (10¹⁴) Read/Writes

NoDelay™ Writes

Page Mode Operation to 33MHz

Advanced High-Reliability Ferroelectric Process

Low Power Operation

•

2.7V – 3.6V Power Supply

14 mA Active Current

SRAM Compatible

•

JEDEC 512Kx16 SRAM Pinout

60 ns Access Time, 115 ns Cycle Time

Industry Standard Configuration

•

Industrial Temperature -40° C to +85° C

48-pin “Green”/RoHS FBGA package

Advanced Features

•

Low V_DDMonitor Protects Memory against

Inadvertent Writes

are guaranteed over the industrial temperature range

of –40°C to +85°C.

Description

The FM23MLD16 is a 512Kx16 nonvolatile memory

that reads and writes like a standard SRAM. A

ferroelectric random access memory or F-RAM is

nonvolatile, which means that data is retained after

power is removed. It provides data retention for over

10 years while eliminating the reliability concerns,

functional disadvantages, and system design

complexities of battery-backed SRAM (BBSRAM).

Fast write timing and very high write endurance

make F-RAM superior to other types of memory.

48-Ball FBGA Top View (Ball Down)

/LB

/OE

/UB

CE2

DQ0

DQ2

DQ8

DQ9

/CE1

DQ1

DQ10

In-system operation of the FM23MLD16 is very

similar to other RAM devices and can be used as a

drop-in replacement for standard SRAM. Read and

write cycles may be triggered by a chip enable or

simply by changing the address. The F-RAM

memory is nonvolatile due to its unique ferroelectric

memory process. These features make the

FM23MLD16 ideal for nonvolatile memory

applications requiring frequent or rapid writes in the

form of an SRAM.

VSS

VDD

DQ11

DQ12

A17

DQ3

DQ4

DQ5

VDD

VSS

DQ6

A16

A15

DQ14 DQ13

A14

DQ15

A18

A12

A13

A10

/WE

A11

DQ7

The FM23MLD16 includes a low voltage monitor

that blocks access to the memory array when V_DD

drops below a critical threshold. The memory is

protected against an inadvertent access and data

corruption under this condition.

Ordering Information

FM23MLD16-60-BG 60 ns access, 48-pin

“Green”/RoHS FBGA

The FM23MLD16 F-RAM is available in a 48-ball

FBGA surface mount package. Device specifications

This is a product that has fixed target specifications but are subject

to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 1.0

Dec. 2008

Page 1 of 13

12 3 4 5 6 7...13

中文翻译

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与FM23MLD16相关器件

型号	品牌	获取价格	描述	数据表
FM23MLD16-60-BG	RAMTRON	获取价格	8Mbit F-RAM Memory
FM24	YANGJIE	获取价格	SOD-323FL
FM240	FORMOSA	获取价格	Silicon epitaxial planer type
FM240	RECTRON	获取价格	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Ampere
FM2400RTIM8B	ETC	获取价格	Module receptor 2400
FM2400TSIM	ETC	获取价格	MODULATOR
FM240A	RECTRON	获取价格	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
FM240A-T	RECTRON	获取价格	暂无描述
FM240AV-W	RECTRON	获取价格	Rectifier Diode,
FM240C	RECTRON	获取价格	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 2.0 Ampere

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