5秒后页面跳转
捷配首页

Datasheet > FH1-G
FH1-G PDF预览

FH1-G

更新时间： 2024-09-28 03:36:47
品牌 Logo 应用领域
WJCI /
页数 文件大小 规格书
7页 754K
描述
High Dynamic Range FET

阅读下载

中文翻译

获取价格

FH1-G 数据手册

 浏览型号FH1-G的Datasheet PDF文件第2页浏览型号FH1-G的Datasheet PDF文件第3页浏览型号FH1-G的Datasheet PDF文件第4页浏览型号FH1-G的Datasheet PDF文件第5页浏览型号FH1-G的Datasheet PDF文件第6页浏览型号FH1-G的Datasheet PDF文件第7页 
The Communications Edge
TM  
FH1  
High Dynamic Range FET  
Product Information  
Product Features  
Product Description  
Functional Diagram  
4
The FH1 is a high dynamic range FET packaged in a low-  
cost surface-mount package. The combination of low noise  
figure and high output IP3 at the same bias point makes it  
ideal for receiver and transmitter applications. The device  
combines dependable performance with superb quality to  
maintain MTTF values exceeding 100 years at mounting  
temperatures of +85 qC. The FH1 is available the  
enviornmentally-friendly lead-free/green/RoHS-compliant  
SOT-89 package.  
xꢀ 50 – 3000 MHz  
xꢀ Low Noise Figure  
xꢀ 18 dB Gain  
xꢀ +42 dBm OIP3  
xꢀ +21 dBm P1dB  
xꢀ Single or Dual Supply Operation  
xꢀ Lead-free/Green/RoHS-compliant  
SOT-89 Package  
1
2
3
Function  
Gate  
Drain  
Pin No.  
1
3
The device utilizes a high reliability GaAs MESFET  
technology and is targeted for applications where high  
linearity is required. It is well suited for various current  
and next generation wireless technologies such as GPRS,  
GSM, CDMA, and W-CDMA. In addition, the FH1 will  
work for other applications within the 50 to 3000 MHz  
frequency range such as fixed wireless.  
xꢀ MTTF > 100 years  
Source  
2, 4  
Applications  
xꢀ Mobile Infrastructure  
xꢀ CATV / DBS  
xꢀ W-LAN / ISM  
xꢀ Defense / Homeland Security  
Specifications (1)  
Typical Performance (6)  
DCElectrical Parameter Units Min Typ Max  
Parameter  
Frequency  
S21  
Units  
MHz  
dB  
Typical  
1960  
Saturated Drain Current, Idss (2)  
Transconductance, Gm  
mA  
mS  
V
100  
140  
120  
-1.5  
170  
900  
19  
-11  
2140  
16.5  
-22  
16.5  
-20  
Pinch-off Voltage, Vp (3)  
-3  
S11  
dB  
S22  
dB  
-10  
-9  
-9  
Output IP3 (4)  
Output P1dB  
Noise Figure  
Drain Bias  
Gate Voltage  
dBm  
dBm  
dB  
+42  
+21.8  
2.7  
+40  
+22.1  
3.1  
+40  
+22.1  
3.0  
RFParameter  
Operational Bandwidth  
Test Frequency  
Small-signal Gain, Gss  
Max Stable Gain, Gmsg  
Output IP3 (4)  
Units Min Typ Max  
MHz  
MHz  
dB  
50 – 3000  
800  
18  
5V @ 140mA  
0
17  
V
dB  
23  
dBm  
dBm  
dB  
+38  
+42  
+21  
0.77  
+5  
6. The device requires appropriate matching to become unconditionally stable. Parameters reflect  
performance in an appropriate application circuit.  
P1dB  
Minimum Noise Figure (5)  
Drain Bias  
V
Gate Bias  
V
0
1. DC and RF parameters are measured under the following conditions unless otherwise noted:  
25 C with Vds = 5V, Vgs = 0V, in a 50 system.  
2. Idss is measured with Vgs = 0V.  
3. Pinch-off voltage is measured with Ids = 0.6 mA.  
4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The  
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
5. The minimum noise figure has  
=
=
.
S
L
OPT  
Absolute Maximum Rating  
Parameter  
Rating  
Operating Case Temperature  
Storage Temperature  
Drain to Source Voltage  
Gate to Source Voltage  
Gate Current  
-40 to +85 qC  
-55 to +150 qC  
+7 V  
Ordering Information  
-6 V  
4.5 mA  
Part No.  
FH1-G  
Description  
RF Input Power (continuous)  
Junction Temperature  
4 dB above Input P1dB  
+220 qC  
High Dynamic Range FET  
(lead-free/green/RoHS-compliant SOT-89 package)  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice.  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com  
Web site: www.wj.com  
Page 1 of 7 July 2006  
1234567

中文翻译

下载PDF

与FH1-G相关器件

型号 品牌 获取价格 描述 数据表
FH1S010H51 JAE

获取价格

 		Card Edge Connector, 10 Contact(s), 1 Row(s), Female, Right Angle, 0.02 inch Pitch, Surfac
FH1-S-010-H-5-1-E3000 JAE

获取价格

 		Card Edge Connector, 10 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal
FH1-S-018-H-5-1-E3000 JAE

获取价格

 		Card Edge Connector, 18 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal
FH1S020H51 JAE

获取价格

 		Card Edge Connector, 20 Contact(s), 1 Row(s), Female, Right Angle, 0.02 inch Pitch, Surfac
FH1-S-020-H-5-1-E3000 JAE

获取价格

 		Card Edge Connector, 20 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal
FH1S030H51 JAE

获取价格

 		Card Edge Connector, 30 Contact(s), 1 Row(s), Female, Right Angle, 0.02 inch Pitch, Surfac
FH1-S-030-H-5-1-E3000 JAE

获取价格

 		Card Edge Connector, 30 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal
FH2 GOOD-ARK

获取价格

 		Surface Mount Glass Passivated High Efficiency Rectifier
FH2000021 DIODES

获取价格

 		Parallel - Fundamental Quartz Crystal, 20MHz Nom, SMD, 4 PIN
FH2000022 DIODES

获取价格

 		Parallel - Fundamental Quartz Crystal, 20MHz Nom, SMD, 4 PIN

与FH1-G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证