Datasheet > FGZ50N65WD

FGZ50N65WD

更新时间： 2024-03-03 10:09:40

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
9页	767K
描述
Molded Package TO-247-4

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FGZ50N65WD 数据手册

FGZ50N65WD

Discrete IGBT

http://www.fujielectric.com/products/semiconductor/

Graph.7

Graph.8

Typical Capacitance

Typical Gate Charge

V^GE=0V, f=1MHz, Tvj=25°C

V^CC=520V, IC=50A, Tvj=25°C

10⁴

10³

10²

10¹

10⁰

ies

oes

res

10^-2

10^-1

10⁰

10¹

100

150

200

250

300

350

CE [V]

QG [nC]

Graph.9

Graph.10

Typical switching time vs. I^C

T^vj=150°C, VCC=400V

V^GE=15V, RG=+10/-20Ω

Typical switching time vs. R^G

T^vj=150°C, VCC=400V, IC=25A

V^GE=15V

1000

100

1000

100

d(off)

td(off)

d(on)

100

Collector Current

[A]

Gate Resistor RG [Ω]

Graph.11

Graph.12

Typical switching losses vs. I^C

T^vj=150°C, VCC=400V

V^GE=15V, RG=+10/-20Ω

Typical switching losses vs. R^G

T^vj=150°C, VCC=400V, IC=25A

V^GE=15V

1.5

1.0

0.5

0.0

off

100

Collector Current I

[A]

Gate Resistor

[Ω]

1 2 345 6 7...9

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