5秒后页面跳转
FES16GT PDF预览

FES16GT

更新时间: 2024-11-28 20:24:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 58K
描述
16A Ultra Fast Recovery Rectifier, TO-220 2L, 2000-RAIL

FES16GT 技术参数

是否无铅:不含铅生命周期:Obsolete
包装说明:R-PSFM-T2Reach Compliance Code:compliant
风险等级:5.7Is Samacsys:N
其他特性:HIGH RELIABILITY应用:FAST RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:250 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大功率耗散:7.81 W
最大重复峰值反向电压:400 V最大反向电流:10 µA
最大反向恢复时间:0.05 µs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

FES16GT 数据手册

 浏览型号FES16GT的Datasheet PDF文件第2页浏览型号FES16GT的Datasheet PDF文件第3页 
FES16AT - FES16JT  
Features  
PIN 1  
PIN 3  
+
Low forward voltage drop.  
High surge current capacity.  
High current capability.  
High reliability.  
CASE  
Case Positive  
PIN 1  
PIN 3  
-
1
2
Case Negative  
Suffix "R"  
TO-220AC  
Fast Rectifiers (Glass Passivated)  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Value  
Symbol  
Units  
Parameter  
16AT 16BT 16CT 16DT 16FT 16GT  
16HT  
16JT  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse  
Voltage  
Average Rectified Forward Current,  
.375 " lead length @ TA = 100°C  
Non-repetitive Peak Forward Surge  
Current  
50  
100 150 200 300  
16  
400  
500  
600  
V
A
250  
A
8.3 ms Single Half-Sine-Wave  
Storage Temperature Range  
-65 to +150  
-65 to +150  
V
Tstg  
TJ  
Operating Junction Temperature  
pF  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
7.81  
16  
W
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Lead  
RθJA  
RθJL  
°C/W  
°C/W  
1.2  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Device  
Symbol  
Units  
Parameter  
16AT  
16BT  
0.95  
35  
16CT 16DT 16FT  
16GT  
16HT  
1.5  
16JT  
VF  
trr  
Forward Voltage @ 8.0A  
Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A  
1.3  
V
50  
ns  
IR  
Reverse Current @ rated VR  
10  
500  
A
A
µ
µ
T = 25 C  
°
A
T = 100 C  
°
A
CT  
Total Capacitance  
pF  
170  
145  
VR = 4.0. f = 1.0 MHz  
2001 Fairchild Semiconductor Corporation  
FES16AT - FES16JT, Rev. C  

与FES16GT相关器件

型号 品牌 获取价格 描述 数据表
FES16GT-45 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 16A, 400V V(RRM), Silicon, TO-220AC, PLASTIC PACKAGE-
FES16GT-E3/45 VISHAY

获取价格

DIODE 16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2,
FES16GTHE3/45 VISHAY

获取价格

DIODE 16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2,
FES16GTR FAIRCHILD

获取价格

16 Ampere Glass Passivated Super Fast Rectifiers
FES16HT EIC

获取价格

Ultrafast Plastic Rectifiers
FES16HT VISHAY

获取价格

FAST EFFICIENT PLASTIC RECTIFIER
FES16HT FAIRCHILD

获取价格

16 Ampere Glass Passivated Super Fast Rectifiers
FES16HT ONSEMI

获取价格

Rectifier Diode
FES16HT-45 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 16A, 500V V(RRM), Silicon, TO-220AC, PLASTIC PACKAGE-
FES16HT-E3/45 VISHAY

获取价格

DIODE 16 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2,