Datasheet > FES16JTR

FES16JTR

更新时间： 2024-11-28 12:52:15

品牌	Logo	应用领域
THINKISEMI		整流二极管局域网
页数	文件大小	规格书
2页	447K
描述
16.0 Ampere Reverse Polarity Super Fast Recovery Rectifier Diode

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中文翻译

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数据手册

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FES16JTR 数据手册

FES16ATR thru FES16JTR

Pb Free Plating Product

16.0 Ampere Reverse Polarity Super Fast Recovery Rectifier Diode

Unit : inch (mm)

TO-220AC

Features

ꢀ

Glass passivated chip junction

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

Low forward voltage drop

High current capability

Low reverse leakage current

.139(3.55)

MIN

.054(1.39)

.045(1.15)

High surge current capability

Application

Automotive Inverters/Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

.038(0.96)

.019(0.50)

.025(0.65)MAX

Mechanical Data

ꢀ

Case: Heatsink TO-220AC

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

.1(2.54)

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.1 gram approxiamtely

Negative

Suffix "TR"

Positive

Suffix "T"

Maximum Ratings and Electrical Characteristics

Rating at 25 ℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

FES

Symbol

Unit

Type Number

16ATR 16BTR 16CTR 16DTR 16FTR 16GTR 16HTR 16JTR

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

500

350

500

600

420

600

Maximum DC Blocking Voltage

100

I_F(AV)

I_FSM

V_F

Maximum Average Forward Rectified Current

Peak Forward Surge Current, 8.3 ms Single Half Sine-

wave Superimposed on Rated Load (JEDEC method)

200

Maximum Instantaneous Forward Voltage (Note 1)

@ 16 A

0.975

1.3

1.7

400

Maximum Reverse Current @ Rated VR T_A=25 ℃

I_R

Maximum Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Typical Thermal Resistance

_A=100 ℃

Trr

130

100

R_θjC

T_J

℃

Operating Temperature Range

- 65 to + 150

℃

Storage Temperature Range

T_STG

℃

Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle

Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Page 1/2

http://www.thinkisemi.com/

Rev.04/2014

中文翻译

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与FES16JTR相关器件

型号	品牌	获取价格	描述	数据表
FES16KT	THINKISEMI	获取价格	16.0 Ampere Heatsink Package Positive Ultra Fast Recovery Rectifier Diode
FES16KTR	THINKISEMI	获取价格	16.0 Ampere Heatsink Package Negative Ultra Fast Recovery Rectifier Diode
FES16LT	THINKISEMI	获取价格	16.0 Ampere Heatsink Package Positive Ultra Fast Recovery Rectifier Diode
FES16LTR	THINKISEMI	获取价格	16.0 Ampere Heatsink Package Negative Ultra Fast Recovery Rectifier Diode
FES16MT	THINKISEMI	获取价格	16.0 Ampere Heatsink Package Positive Ultra Fast Recovery Rectifier Diode
FES16MTR	THINKISEMI	获取价格	16.0 Ampere Heatsink Package Negative Ultra Fast Recovery Rectifier Diode
FES16NT	THINKISEMI	获取价格	16.0 Ampere Heatsink Package Positive Ultra Fast Recovery Rectifier Diode
FES16NTR	THINKISEMI	获取价格	16.0 Ampere Heatsink Package Negative Ultra Fast Recovery Rectifier Diode
FES16xT	VISHAY	获取价格	Ultrafast Plastic Rectifier
FES16XX	EIC	获取价格	Ultrafast Plastic Rectifiers

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