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FDFS6N754 PDF预览

FDFS6N754

更新时间： 2024-09-26 11:14:11
品牌 Logo 应用领域
安森美 - ONSEMI PC开关脉冲光电二极管晶体管肖特基二极管
页数 文件大小 规格书
9页 555K
描述
集成式 N 沟道，Power Trench® MOSFET 和肖特基二极管，30V，4A，56mΩ

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FDFS6N754 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.63Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：5445
Samacsys Pin Count：8Samacsys Part Category：Integrated Circuit
Samacsys Package Category：Small Outline PackagesSamacsys Footprint Name：SO 8L NB (SOIC)
Samacsys Released Date：2015-04-16 09:48:08Is Samacsys：N
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：4 A最大漏极电流 (ID)：4 A
最大漏源导通电阻：0.056 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：20 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDFS6N754 数据手册

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