是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Not Recommended | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X7 | 针数: | 7 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.12 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 1200 A | 集电极-发射极最大电压: | 1700 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X7 | 元件数量: | 1 |
端子数量: | 7 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 5200 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 1900 ns |
标称接通时间 (ton): | 900 ns | VCEsat-Max: | 2.45 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FD800R17KF6C_B2 | INFINEON |
获取价格 |
IGBT | |
FD800R17KF6CB2V | ETC |
获取价格 |
IGBT Module | |
FD800R33KF1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES, N-Channel, | |
FD800R33KF2 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1300A I(C), 3300V V(BR)CES, | |
FD800R33KF2C-K | INFINEON |
获取价格 |
IHM-A module | |
FD800R33KF2C-K | EUPEC |
获取价格 |
Technische Information / technical information | |
FD800R33KF2CKNOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1300A I(C), 3300V V(BR)CES, N-Channel, MODULE-9 | |
FD800R33KF2-K | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1300A I(C), 3300V V(BR)CES, | |
FD800R33KF2-KB5 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1300A I(C), 3300V V(BR)CES, | |
FD800R33KL2C-K_B5 | EUPEC |
获取价格 |
IGBT-modules |