Datasheet > FC150

FC150

更新时间： 2024-09-23 22:40:51

品牌	Logo	应用领域
三洋 - SANYO		驱动器放大器
页数	文件大小	规格书
4页	147K
描述
Low-Frequency General-Purpose Amp, Driver Applications

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FC150 数据手册

Ordering number:EN3965

FC150

PNP/NPN Epitaxial Planar Silicon Composite Transistor

Low-Frequency General-Purpose Amp,

Driver Applications

Features

Package Dimensions

unit:mm

· Composite type with 2 transistors contained in the

CP package currently in use, improving the mount-

ing efficiency greatly.

2067

[FC150]

· The FC150 is formed with two chips, being equiva-

lent to the 2SA1813/2SC4413, placed in one pack-

age.

· Adoption of FBET process.

· High DC current gain.

· Hgih V

EBO

E1:Emitter 1

B1:Base 1

Electrical Connection

C2:Collector 2

E2:Emitter 2

B2:Base 2

C1:Collector 1

TR1=PNP

TR2=NPN

SANYO:CP6

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

(–30)60

(–25)50

(–)15

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

(–150)100

(–300)200

(–30)20

200

˚C

Collector Current (Pulse)

Base Current

Collector Dissipation

Total Dissipation

1 unit

300

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

˚C

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditons

Unit

min

max

–0.1

Collector Cutoff Current

=(–20V)40V, I =0

=(–)10V, I =0

=(–)5V, I =(–)1mA

=(–)10V, I =(–)10mA

µA

CBO

Emitter Cutoff Current

DC Current Gain

EBO

(500)800

(800)1500 (1200)3200

(210)200

Gain-Bandwidth Product

Output Capacitance

MHz

Cob

=(–)10V, f=1MHz

(2.6)1.5

C-E Saturation Voltage

B-E Saturation Voltage

C-B Breakdown Voltage

C-E Breakdown Voltage

E-B Breakdown Voltage

=(–)50mA, I =(–)1mA

=(–)10µA, I =0

(–0.15)0.1

(–0.78)0.8

(–)0.3

(–)1.1

CE(sat)

BE(sat)

(–30)60

(–25)50

(–)15

(BR)CBO

(BR)CEO

(BR)EBO

=(–)1mA, R =∞

=(–)10µA, I =0

Note:The specifications shown above are for each individual transistor.

( ):PNP

Marking:150

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/12094TH (KOTO) 8-7600 No.3965-1/4

12 3 4

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