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FB15R06KL4B1 PDF预览

FB15R06KL4B1

更新时间: 2024-02-26 17:10:47
品牌 Logo 应用领域
EUPEC /
页数 文件大小 规格书
13页 286K
描述
1GBT-Module

FB15R06KL4B1 技术参数

生命周期:Transferred包装说明:MODULE-26
Reach Compliance Code:unknown风险等级:5.63
外壳连接:ISOLATED最大集电极电流 (IC):19 A
集电极-发射极最大电压:600 V配置:COMPLEX
JESD-30 代码:R-XUFM-X26元件数量:7
端子数量:26封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管元件材料:SILICON
标称断开时间 (toff):249 ns标称接通时间 (ton):71 ns
Base Number Matches:1

FB15R06KL4B1 数据手册

 浏览型号FB15R06KL4B1的Datasheet PDF文件第2页浏览型号FB15R06KL4B1的Datasheet PDF文件第3页浏览型号FB15R06KL4B1的Datasheet PDF文件第4页浏览型号FB15R06KL4B1的Datasheet PDF文件第5页浏览型号FB15R06KL4B1的Datasheet PDF文件第6页浏览型号FB15R06KL4B1的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FB15R06KL4B1  
Vorläufig  
preliminary  
Elektrische Eigenschaften / electrical properties  
Höchstzulässige Werte / maximum rated values  
Diode Gleichrichter/ diode rectifier  
Periodische Rückw. Spitzensperrspannung  
Tvj =25°C  
VRRM  
800  
V
repetitive peak reverse voltage  
Durchlaßstrom Grenzeffektivwert pro Chip  
TC =80°C  
IFRMSM  
58  
50  
A
A
RMS forward current per chip  
Gleichrichter Ausgang Grenzeffektivstrom  
TC =80°C  
IRMSmax  
IFSM  
maximum RMS current at Rectifier output  
tP = 10 ms, Tvj = 25°C  
tP = 10 ms, Tvj = 150°C  
tP = 10 ms, Tvj = 25°C  
tP = 10 ms, Tvj = 150°C  
Stoßstrom Grenzwert  
surge forward current  
Grenzlastintegral  
I2t - value  
448  
358  
1000  
642  
A
A
I2t  
A2s  
A2s  
Transistor Wechselrichter/ transistor inverter  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
Tvj =25°C  
VCES  
600  
V
TC =65°C  
TC = 25 °C  
IC,nom.  
IC  
Kollektor-Dauergleichstrom  
DC-collector current  
15  
19  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms,  
TC = 25°C  
TC =65°C  
ICRM  
Ptot  
30  
60  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
Diode Wechselrichter/ diode inverter  
Dauergleichstrom  
DC forward current  
IF  
15  
30  
25  
A
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
Grenzlastintegral  
I2t - value  
I2t  
A2s  
VR = 0V, tp = 10ms, Tvj = 125°C  
Transistor Brems-Chopper/ transistor brake-chopper  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
Tvj =25°C  
VCES  
600  
V
TC =65 °C  
TC = 25 °C  
IC,nom.  
IC  
Kollektor-Dauergleichstrom  
DC-collector current  
15  
19  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms,  
TC = 25°C  
TC =65°C  
ICRM  
Ptot  
30  
60  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
Diode Brems-Chopper/ diode brake-chopper  
Dauergleichstrom  
DC forward current  
IF  
15  
30  
A
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
prepared by: Thomas Passe  
approved by: R. Keggenhoff  
date of publication: 2003-03-26  
revision: 2.1  
1(12)  

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