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FAN3226 PDF预览

FAN3226

更新时间： 2024-01-08 10:30:28
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 驱动器栅极栅极驱动
页数 文件大小 规格书
24页 1302K
描述
Dual 2A High-Speed, Low-Side Gate Drivers

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FAN3226 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.31.00.01风险等级：4.29
高边驱动器：NO接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：R-PDSO-G8JESD-609代码：e4
长度：5 mm湿度敏感等级：1
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
标称输出峰值电流：3 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified座面最大高度：1.75 mm
最大供电电压：18 V最小供电电压：4.5 V
标称供电电压：12 V表面贴装：YES
温度等级：AUTOMOTIVE端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL断开时间：0.022 µs
接通时间：0.017 µs宽度：4 mm
Base Number Matches：1

FAN3226 数据手册

 浏览型号FAN3226的Datasheet PDF文件第16页浏览型号FAN3226的Datasheet PDF文件第17页浏览型号FAN3226的Datasheet PDF文件第18页浏览型号FAN3226的Datasheet PDF文件第20页浏览型号FAN3226的Datasheet PDF文件第21页浏览型号FAN3226的Datasheet PDF文件第22页 
Thermal Guidelines  
Gate drivers used to switch MOSFETs and IGBTs at  
high frequencies can dissipate significant amounts of  
power. It is important to determine the driver power  
dissipation and the resulting junction temperature in the  
application to ensure that the part is operating within  
acceptable temperature limits.  
In the forward converter with synchronous rectifier  
shown in the typical application diagrams, the  
FDMS8660S is a reasonable MOSFET selection. The  
gate charge for each SR MOSFET would be 60nC with  
VGS = VDD = 7V. At a switching frequency of 500kHz, the  
total power dissipation is:  
The total power dissipation in a gate driver is the sum of  
PGATE = 60nC • 7V • 500kHz • 2 = 0.42W  
PDYNAMIC = 3mA • 7V • 2 = 0.042W  
PTOTAL = 0.46W  
(5)  
(6)  
(7)  
two components, PGATE and PDYNAMIC  
:
PTOTAL = PGATE + PDYNAMIC  
(1)  
Gate Driving Loss: The most significant power loss  
results from supplying gate current (charge per unit  
time) to switch the load MOSFET on and off at the  
switching frequency. The power dissipation that  
results from driving a MOSFET at a specified gate-  
source voltage, VGS, with gate charge, QG, at  
switching frequency, FSW, is determined by:  
The SOIC-8 has  
characterization parameter of  
a
junction-to-board thermal  
ψJB  
= 43°C/W. In a  
system application, the localized temperature around  
the device is a function of the layout and construction of  
the PCB along with airflow across the surfaces. To  
ensure reliable operation, the maximum junction  
temperature of the device must be prevented from  
exceeding the maximum rating of 150°C; with 80%  
derating, TJ would be limited to 120°C. Rearranging  
Equation 4 determines the board temperature required  
to maintain the junction temperature below 120°C:  
PGATE = QG • VGS • FSW • n  
(2)  
n is the number of driver channels in use (1 or 2).  
Dynamic Pre-drive / Shoot-through Current: A  
power loss resulting from internal current  
consumption under dynamic operating conditions,  
including pin pull-up / pull-down resistors, can be  
obtained using the “IDD (No-Load) vs. Frequency”  
graphs in Typical Performance Characteristics to  
determine the current IDYNAMIC drawn from VDD  
under actual operating conditions:  
ψ
TB = TJ - PTOTAL  
•
(8)  
(9)  
JB  
TB = 120°C – 0.46W • 43°C/W = 100°C  
For comparison, replace the SOIC-8 used in the  
previous example with the 3x3mm MLP package with  
ψJB  
= 3.5°C/W. The 3x3mm MLP package could  
operate at PCB temperature of 118°C, while  
a
PDYNAMIC = IDYNAMIC • VDD • n  
(3)  
maintaining the junction temperature below 120°C. This  
illustrates that the physically smaller MLP package with  
thermal pad offers a more conductive path to remove  
the heat from the driver. Consider tradeoffs between  
reducing overall circuit size with junction temperature  
reduction for increased reliability.  
Once the power dissipated in the driver is determined,  
the driver junction rise with respect to circuit board can  
be evaluated using the following thermal equation,  
ψJB  
assuming  
was determined for a similar thermal  
design (heat sinking and air flow):  
ψ
TJ = PTOTAL  
where:  
•
JB + TB  
(4)  
TJ  
= driver junction temperature  
ψJB  
= (psi) thermal characterization parameter relating  
temperature rise to total power dissipation  
TB = board temperature in location defined in  
Note 1 under Thermal Resistance table.  
© 2007 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FAN3226 / FAN3227 / FAN3228 / FAN3229 • Rev. 1.0.2  
19  
1...16171819202122...24

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