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FAN3121C PDF预览

FAN3121C

更新时间: 2024-01-17 10:12:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 驱动器栅极栅极驱动
页数 文件大小 规格书
12页 459K
描述
Application Review and Comparative Evaluation of Low-Side Gate Drivers

FAN3121C 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SOP, SOP8,.25Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.31.00.01
Factory Lead Time:1 week风险等级:1.39
Is Samacsys:N内置保护:UNDER VOLTAGE
高边驱动器:NO接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:5 mm湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
输出电流流向:SOURCE AND SINK封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:12 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大压摆率:0.9 mA
最大供电电压:18 V最小供电电压:4.5 V
标称供电电压:12 V表面贴装:YES
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:0.035 µs接通时间:0.035 µs
宽度:4 mmBase Number Matches:1

FAN3121C 数据手册

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AN-6069  
APPLICATION NOTE  
Conclusion  
Low-side drivers are used to drive power MOSFETs in  
applications including clamped inductive load switching,  
synchronous rectifier circuits, and pulse/gate transformer  
drive circuits. The relationship of gate drive current to the  
MOSFET switching and transition intervals has been  
detailed during the prominent MOSFET switching intervals.  
Potential driver solutions; including discrete components,  
integrated PMOS/NMOS, and compound drivers, were  
examined. Some of the non-ideal characteristics of the  
various driver circuits were highlighted.  
There is not a simple unified method to characterize the  
output current sink and source capability of the many types  
of drivers available. The test circuits presented in this note  
can be used to investigate the VOUT vs. IOUT capability of  
discrete and integrated circuit drivers, enabling evaluation  
and comparison of drivers for a range of applications.  
References  
[1] 2006 Fairchild Power Seminar Topic, “Understanding Modern Power MOSFETs,” available on the fairchildsemi.com website at the link:  
http://www.fairchildsemi.com/powerseminar/pdf/understanding_modern_power_mOSFETs.pdf  
[2] Oh, K. S., “MOSFET Basics”, July, 2000, available as AN9010 from the fairchildsemi.com website.  
[3] Balogh, L. “Design and Application Guide for High Speed MOSFET Gate Drive Circuits,” Power Supply Design Seminar SEM-1400, Topic 2,  
Texas Instruments Literature No. SLUP169.  
[4] ICE Components Gate Drive Transformer Datasheet “GT03.pdf” dated 10/06, available from www.icecomponents.com.  
[5] 2006 Fairchild Power Seminar Topic, “Practical Power Application Issues for High Power Systems,” available on the fairchildsemi.com website at the  
link: http://www.fairchildsemi.com/powerseminar/pdf/practical_power_high_power_systems.pdf  
[6] Johnson, H. Dr, “High-Speed Digital Design On-Line Newsletter,” Vol. 3 Issue 8, www.sigcon.com/Pubs/news/3_8.htm  
Author  
Mark Dennis was born in Troy, NC, and received the Bachelor of Engineering degree from Duke University in 1983. After  
graduation he has worked in industries encompassing power electronics applications such as offline and DC to DC power  
supply design for telecom and computer systems, high voltage supplies for electrostatic precipitators, and online UPS  
systems. For over eight years Mark has been working in the semiconductor industry and he is employed by Fairchild  
Semiconductor as a Staff Engineer working in High Power Systems.  
© 2007 Fairchild Semiconductor Corporation  
Rev. 1.0.3 • 1/6/10  
www.fairchildsemi.com  
10  

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