R
F1A~F1M
F
A
S
T
R
E
C
O
V
E
R
Y
R
E
C
T
I
F
I
E
R
S
u
r
f
a
c
e
M ou nt
S
E
M
I
C
O
N
D
U
C
T O R
R
e
v
e
r
s
e
V
o
l
t
a
g
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-
5
0
t
o
1
0
0
0
V
o
l
t
s
F
o
r
w
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0
A
m
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FEATURES
●
●
●
●
●
●
●
Low profile space
Ideal for automated placement
Glass passivated chip junctions
Low forward voltage drop
Low leakage current
High forward surge capability
High temperature soldering:
260℃/10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
●
M
E
C
H
A
N
I
C
A
L
D
A
T
A
●
Case: JEDEC SOD-123FL molded plastic
body over glass passivated chip
●
●
Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity: Laser band denotes cathode end
M
A
X
IM
U
M
R
A
T
I
N
G
S
A
N
D
E
L
E
C
T
R
I
C
A
L
C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
(TA = 25 °C unless otherwise noted)
Symbol F1A
F
F1D
F1G
F1J
F
1K
F1M UNIT
1B
VRRM
50
Maximum repetitive peak reverse voltage
Maximum RMS voltage
100
70
200
140
200
400
280
400
1
600
420
600
800
560
800
1000
700
V
V
V
A
VRMS
35
VDC
50
Maximum DC blocking voltage
100
1000
IF(AV)
IFSM
VF
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
25
A
V
Maximum instantaneous forwad voltage at 1.0A
1.3
Maximum DC reverse current
TA = 25 ℃
TA = 100℃
5.0
50
IR
μA
at Rated DC blocking voltage
Maximum reverse recovery time
at IF = 0.5 A , IR = 1.0 A , Irr = 0.25 A
trr
CJ
150
500
250
nS
p F
℃
Typical junction capacitance at 4.0 V ,1MHz
15
Operating junction and storage
temperature range
TJ, TSTG
–55 to +150
J
I
N
A
N
J
I
N
G
H
E
N
G
E
L
E
C
T
R
O
N
I
C
S
C
O
.
,
L
T
D
.