Datasheet > F1077

F1077

更新时间： 2022-12-03 04:12:38

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	41K
描述
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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数据手册

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F1077 数据手册

F1077

POUT VS PIN GRAPH

CAPACITANCE VS VOLTAGE

F1077 POUT VS PIN F=150 MHZ; IDQ=1.2A;

VDS=28.0V

F1B 6 DICE CAPACITANCE

1000

180

160

140

120

100

15.00

14.00

13.00

12.00

11.00

10.00

9.00

Ciss

Coss

100

Efficiency = 60%

Crss

8.00

PIN IN WATTS

VDS IN VOLTS

POUT

GAIN

IV CURVE

ID AND GM VS VGS

F1B 6 DICE IV CURVE

F1B 6 DIE GM & ID vs VG

100

0.1

Vds in Volts

Vg = 2V

Vg = 4V

Vg = 6V

Vg = 8V

Vg = 10V

Vg = 12V

Vgs in Volts

S11 AND S22 SMITH CHART

PACKAGE DIMENSIONS IN INCHES

REVISION 8/1/97

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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