SFF440J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
8 AMP
N-Channel
Power MOSFET
500 Volts
DESIGNER’S DATA SHEET
Part Number / Ordering Information1/
SFF440 ___ ____
0.86 Ω
Screening2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
└
└
Features:
Rugged construction with polysilicon gate
Low RDS(on) and high transconductance
Excellent high temperature stability
Very fast switching speed
Fast recovery and superior dv/dt performance
Increased reverse energy capability
Low input and transfer capacitance for easy
paralleling
Package3/
J = TO-257
Hermetically sealed package
Low inductance leads
TX, TXV, S-Level screening available
Replaces: IRF440 types
Maximum Ratings
Symbol
VDS
Value
500
Units
Drain - Source Voltage
Gate - Source Voltage
V
V
VGS
±20
Max. Continuous Drain Current (package
limited) @ 25ºC
ID
6.9
-55 to +150
2
A
ºC
Operating & Storage Temperature
TOP & TSTG
RθJC
Maximum Thermal Resistance
(Junction to Case)
ºC/W
@ TC = 25ºC
@ TC = 55ºC
63
48
Total Power Dissipation
W
PD
NOTES:
TO-257
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Maximum current limited by package configuration
4/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00087B
DOC