Datasheet > F00087B_15

F00087B_15

更新时间： 2024-01-23 20:25:44

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
3页	141K
描述
N-Channel POWER MOSFET

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数据手册

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F00087B_15 数据手册

SFF440J

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

8 AMP

N-Channel

Power MOSFET

500 Volts

DESIGNER’S DATA SHEET

Part Number / Ordering Information^1/

SFF440 ___ ____

0.86 Ω

Screening^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

Features:



Rugged construction with polysilicon gate

Low RDS(on) and high transconductance

Excellent high temperature stability

Very fast switching speed

Fast recovery and superior dv/dt performance

Increased reverse energy capability

Low input and transfer capacitance for easy

paralleling

Package^3/

J = TO-257



Hermetically sealed package

Low inductance leads

TX, TXV, S-Level screening available

Replaces: IRF440 types

Maximum Ratings

Symbol

V_DS

Value

500

Units

Drain - Source Voltage

Gate - Source Voltage

V_GS

±20

Max. Continuous Drain Current (package

limited) @ 25ºC

I_D

6.9

-55 to +150

ºC

Operating & Storage Temperature

T_OP& T_STG

R_θJC

Maximum Thermal Resistance

(Junction to Case)

ºC/W

@ T_C= 25ºC

@ T_C= 55ºC

Total Power Dissipation

P_D

NOTES:

TO-257

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Maximum current limited by package configuration

4/ Unless otherwise specified, all electrical characteristics @25^oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00087B

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