EVDD430S / EVDD430CY
30A Ultra Fast MOSFET / IGBT Driver Evaluation Boards
General Description
CircuitOperation
The schematic diagrams for the evaluation boards are
shown in Figures 8 and 9. The external drive signal is
applied to 'Signal In' test point. The PCBs also provide
solder pads across the 50 Ohm input resistor R4 so that a
coax can be soldered directly to the board.The PCBs have
been designed in an attempt to minimize parasitic
inductance associated with long and narrow traces. Large
attachment points have been provided so that the user can
connect larger wire or copper strap to minimize loop
inductance. The diode, resistor combination of DA and RA
provides a controlled rate discharge path for the gate of the
power device when the Enable function forces the driver into
its Tri-State mode. In this mode, the turn-off time of the
power device is determined by the time constant of the input
gate capacitance Ciss and the value of the resistor RA. RA
has not been loaded so that the user may choose the value
which best suits the design.
The EVDD430S / EVDD430CY evaluation boards are
general-purpose circuit boards designed to simplify the
evaluation of the IXYS IXDS430, IXDD430, IXDI430, and
IXDN430 MOSFET / IGBT driver, as well as to provide a
building block for power circuit development. Any of three IC
package types, SOIC-28, 5 lead TO-220, and 5 lead TO-263
are available on two different boards. The board layouts
enable the use of MOSFETs or IGBTs in the TO-247, TO-264
or SOT-227 packages and also allow the driven devices to
be mounted to a heat sink. In doing so, the board
assemblies can be used as a ground referenced, low side
power switch for both single-ended and push-pull
configurations. The board layout for all three driver packages
allows the device tabs to be soldered or strapped to a
ground plane for improved cooling in high-power, high
frequency applications with large MOSFET devices. The
layouts have also been optimized for minimal trace routing
and maximized area to reduce inductance and enhance
performance.
The drive output is attached to the MOSFET / IGBT via the
gate drive resistor positions. The resistors can be replaced
with values to optimize the turn on, turn off performance of
the design. The IXDS430S also includes seperate drive
output source / sink pins and the EVDD430S evaluation
board is arranged such that the turn on rate can be different
from the turn off rate via the seperated output pins of the
device. The IXD_430 C and Y output pins are internally
connected and have just one set of gate resistors.
Figures 1and 2 are photographs of the front and back of the
EVDD430CY board loaded with an IXDI430CI TO-220 driver
while figures 3 and 4 show the EVDD430S board equipped
with the IXDS430S 28 pin SOIC package. The low level
inputs are shown at various points on the boards. The
'Signal In' is a TTL or CMOS level compatible input which
controls the on or off state of the power device Q1or Q2.
'Disable' is a optional input, depending on which device is
installed, and controls the Tri-State output (IXDD430, and
IXDS430 devices only). The Tri-State mode could be used in
a motor drive circuit in which an over current could be
detected and then a disabling signal fed back, to control the
turn off of an IGBT at a slower rate through a seperate 'bleed
off' resistor. The 'VCC-IN' is the low voltage (8.5-35V) supply
input. Figures 5 and 6 illustrate the mounting of a TO-247,
TO-264, SOT-227 power devices.
Finally, the devices are available with an undervoltage trip
point of 8.5V or 11.75V, see order table. If the supply voltage
dips below this fixed point, drive to the power device is
disabled. This feature is selectable on the EVDD430S PCB
by way of JP2 while JP1 provides the option to invert the
drive signal.
Ordering Information
Part Number
EVDD430CI
EVDD430MCI
EVDD430YI
EVDD430MYI
EVDI430CI
Companion Device (1)
Options
UV = 11.75 NI with Enable
IXDD430CI
IXDD430MCI
IXDD430YI
IXDD430MYI
IXDI430CI
TO-220
TO-220
TO-263
TO-263
TO-220
TO-220
TO-263
TO-263
TO-220
TO-220
TO-263
TO-263
28 pin SOIC
UV = 8.5
UV = 11.75 NI with Enable
UV = 8.5 NI with Enable
UV = 11.75 Inverting
UV = 8.5 Inverting
UV = 11.75 Inverting
UV = 8.5 Inverting
UV = 11.75 NI
UV = 8.5 NI
UV = 11.75 NI
UV = 8.5 NI
NI with Enable
EVDI430MCI
EVDI430YI
IXDI430MCI
IXDI430YI
EVDI430MYI
EVDN430CI
EVDN430MCI
EVDN430YI
EVDN430MYI
EVDS430SI
IXDI430MYI
IXDN430CI
IXDN430MCI
IXDN430YI
IXDN430MYI
IXDS430SI
UV / Invert = Selectable w/ Enable
UV = Under Voltage Trip Point, NI = Non Inverting
(1) Companion device to be mounted by user.
Copyright © IXYS CORPORATION 2003
First Release
5秒后页面跳转
SI2301 N沟道MOSFET：资料手册参数分析
ADC0809逐次逼近寄存器型模数转换器：资料手册参数分析
AD9361捷变收发器：全面参数解析与关键特性概览
IRF3205功率MOSFET：资料手册参数分析
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
