Datasheet > ESDZV18-1BF4

ESDZV18-1BF4

更新时间： 2023-12-20 18:44:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	360K
描述
低钳位、低电容双向单线ESD保护

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ESDZV18-1BF4 数据手册

ESDZV18-1BF4

Characteristics

Table 1. Absolute ratings (T_amb= 25 °C)

Parameter

Symbol

Value

Unit

IEC 61000-4-2 contact discharge

IEC 61000-4-2 air discharge

Peak pulse voltage

Peak pulse power dissipation (8/20 μs)

Peak pulse current (8/20 μs)

140

Operating junction temperature range

Storage temperature range

-55 to +150

-65 to +150

260

°C

stg

Maximum lead temperature for soldering during 10 s

Figure 1. Electrical characteristics (definitions)

Symbol

V_Trig

V_CL

Parameter

R_D

Trigger voltage

Clamping voltage

Leakage current @V_RM

V_CLV_TrigV_BRV_RM

I_RM

V_RM

I_PP

Stand-off voltage

Peak pulse current

R_D

Dynamic resistance

Holding voltage

I_R

V_H

I_PP

C_LINE

Input capacitance per line

Table 2. Electrical characteristics (T_amb= 25 °C)

Test condition

Symbol

Min.

Typ.

Max.

Unit

Higher voltage than V

guarantees the protection turn-on

Trig

Lower voltage than V guarantees the protection turn-off

17.3

= 16 V⁽¹⁾

100

8 kV contact discharge after 30 ns, IEC 61000-4-2

21.5

8/20 µs waveform, I = 1 A

F = 1 MHz, V

= 0 V, V

= 30 mV

Ω

LINE

OSC

Pulse duration 100 ns

0.2

1. Application note: when used to protect a line connected to a DC source, the DC voltage must be lower than the minimum V

to enable the diode to return to its non-conducting state after the transient.

DS12250 - Rev 2

page 2/10

123 4 5 6 7...10

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