Datasheet > ESDHD05UF

ESDHD05UF

更新时间： 2024-04-09 19:01:28

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瑞能 - WEEN		/
页数	文件大小	规格书
6页	396K
描述
The ESDHD05UF is designed to protect voltage sensitive components from ESD and transient voltage e

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ESDHD05UF 数据手册

WeEn Semiconductors

ESDHD05UF

ESD Protection Diodes

6. Characteristics

T_j= 25 °C unless otherwise speciﬁed.

Symbol Parameter

Condition

Min

Typ

Max

Unit

V_RWM

V_BR

I_R

Reverse Working Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage

I_R= 1 μA

I_T= 1 mA

9.5

100

V_R= V_RWM

V_C

I_PP= 1 A; t_p= 8/20 μs

I_PP= 20 A; t_p= 8/20 μs

V_R= 0 V; f = 1 MHz

C_j

Junction Capacitance

150

Fig. 1. Pulse rating curve

Fig. 2. Peak pulse power derating curve

Fig. 3. Pulse waveform

Fig. 4. Clamping voltage vs Peak pulse current

ESDHD05UF

All information provided in this document is subject to legal disclaimers.

Product data sheet

21 May 2021

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