Datasheet > ESD7561N2T5G

ESD7561N2T5G

更新时间： 2024-01-12 15:58:02

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	110K
描述
Ultra-Low Capacitance ESD Protection

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中文翻译

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数据手册

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ESD7561N2T5G 数据手册

ESD7561

Ultra-Low Capacitance ESD

Protection

Micro−Packaged Diodes for ESD Protection

The ESD7561 is designed to protect voltage sensitive components

that require ultra−low capacitance from ESD and transient voltage

events. It has industry leading capacitance linearity over voltage

making it ideal for RF applications. This capacitance linearity

combined with the extremely small package and low insertion loss

makes this part well suited for use in antenna line applications for

wireless handsets and terminals.

www.onsemi.com

Features

MARKING

DIAGRAM

• Industry Leading Capacitance Linearity Over Voltage

• Ultra−Low Capacitance: 0.3 pF Typ

• Insertion Loss: 0.05 dB at 1 GHz; 0.21 dB at 3 GHz

• Low Leakage: < 1 nA

X2DFN2

CASE 714AB

V M

• Protection for the following IEC Standards:

♦ IEC61000−4−2 (ESD): Level 4 18 kV Contact

♦ IEC61000−4−4 (EFT): 40 A −5/50 ns

= Specific Device Code

= Date Code

♦ IEC61000−4−5 (Lightning): 1 A (8/20 ms)

• ISO 10605 (ESD) 330 pF/2 kW 23 kV Contact

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

ORDERING INFORMATION

†

Device

Package

Shipping

ESD7561N2T5G

X2DFN2

(Pb−Free)

8000 / Tape &

Reel

Typical Applications

• RF Signal ESD Protection

• RF Switching, PA, and Antenna ESD Protection

• Near Field Communications

• USB 2.0, USB 3.0

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

IEC 61000−4−2 (ESD) (Note 1)

Total Power Dissipation (Note 2) @ T = 25°C

°P °

300

400

°C/W

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range

T , T

−55 to

+150

°C

stg

Lead Solder Temperature − Maximum

(10 Second Duration)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.

2. Mounted with recommended minimum pad size, DC board FR−4

Publication Order Number:

February, 2016 − Rev. 0

ESD7561/D

12 3 4 5 6

中文翻译

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与ESD7561N2T5G相关器件

型号	品牌	获取价格	描述	数据表
ESD7571	ONSEMI	获取价格	Ultra-Low Capacitance ESD Protection
ESD7571N2T5G	ONSEMI	获取价格	Ultra-Low Capacitance ESD Protection
ESD75V12D-A	SOCAY	获取价格	Transient Voltage Suppressors for ESD Protection
ESD75V12D-C	SOCAY	获取价格	Transient Voltage Suppressors for ESD Protection
ESD761	TI	获取价格	1.1pF、±24V、15kV 单通道 LIN 总线 ESD 保护二极管
ESD761DPYR	TI	获取价格	1.1pF、±24V、15kV 单通道 LIN 总线 ESD 保护二极管 \| DPY \|
ESD761DPYRQ1	TI	获取价格	采用 0402 封装的汽车类 1.1pF、±24V、±15kV ESD 保护二极管 \| D
ESD761-Q1	TI	获取价格	采用 0402 封装的汽车类 1.1pF、±24V、±15kV ESD 保护二极管
ESD762	TI	获取价格	具有 8/20µS 浪涌的双通道 1.75pF、±24V、±20kV ESD 保护二极管
ESD762DBZR	TI	获取价格	具有 8/20µS 浪涌的双通道 1.75pF、±24V、±20kV ESD 保护二极管

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