Datasheet > ESD15VET2

ESD15VET2

更新时间： 2024-04-09 18:58:14

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
5页	854K
描述
Tape:3K/Reel,120K/Ctn;

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数据手册

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ESD15VET2 数据手册

ESD5V0ET2 THRU ESD36VET2

ESD15VET2

Parameter

Conditions

Symbol

V_RWM

V_BR

I_R

Min.

Typ.

Max.

Units

Reverse Working Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Forward Voltage

I_T=1mA

15.5

V_RWM=15V

μA

I_F=10mA

V_F

1.1

Clamping Voltage^Note1

Junction Capacitance

I_PP=1A, t_P=8/20μs

I_PP=9A, t_P=8/20μs

V_R=0V, f=1MHz

TLP, t_P=100ns

V_C

C_J

Dynamic Resistance ^Note2

R_DYN

0.19

ESD24VET2

Parameter

Conditions

Symbol

V_RWM

V_BR

I_R

Min.

Typ.

Max.

Units

Reverse Working Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Forward Voltage

I_T=1mA

V_RWM=24V

μA

I_F=10mA

V_F

1.1

Clamping Voltage^Note1

Junction Capacitance

I_PP=1A, t_P=8/20μs

I_PP=7A, t_P=8/20μs

V_R=0V, f=1MHz

TLP, t_P=100ns

V_C

C_J

Dynamic Resistance ^Note2

R_DYN

0.36

ESD36VET2

Parameter

Conditions

Symbol

V_RWM

V_BR

I_R

Units

Reverse Working Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Forward Voltage

I_T=1mA

V_RWM=36V

μA

I_F=10mA

V_F

1.1

Clamping Voltage^Note1

Junction Capacitance

I_PP=1A, t_P=8/20μs

I_PP=5A, t_P=8/20μs

V_R=0V, f=1MHz

TLP, t_P=100ns

V_C

C_J

Dynamic Resistance ^Note2

R_DYN

0.8

Note :

1.Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.

2.TLP parameter: Z0=50Ω, tp=100ns, tr=2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A.

Rev.4-1-01092024

3/5

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