Datasheet > ESD15VD3HE3

ESD15VD3HE3

更新时间： 2023-12-06 20:07:40

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	541K
描述
Tape&Reel: 3Kpcs/Reel;

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数据手册

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ESD15VD3HE3 数据手册

ESD15VD3HE3

Symbol

Parameter

RWM

Peak Reverse Working Voltage

I_F

Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

V_C

_BRV_RWM

Maximum Reverse Peak Pulse Current

I_R

I_T

V_F

Clamping Voltage @ I

Peak Pulse Power

Junction Capacitance

Forward Current

I_PP

Forward Voltage @ I

Electrical Characteristics @ 25°C (Unless Otherwise Specified)

Parameter

Conditions

Symbol

Min.

Typ.

Max.

Units

V_RWM

V_BR

I_R

Reverse Working Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Forward Voltage

I_T=1mA

V_RWM=15V

I_F=10mA

16.5

1.0

μA

V_F

1.1

Clamping Voltage^Note1

V_C

I_PP=1A, t_P=8/20μs

I_PP=5A, t_P=8/20μs

I_PP=8A, t_P=8/20μs

V_C

Dynamic Resistance ^Note2

TLP, t_P=100ns

R_DYN

C_J

0.19

V_R=0V, f=1MHz

Junction Capacitance

Note:

1.Non-repetitive current pulse, according to IEC61000-4-5.

2. I/O to Ground, TLP parameter: Z₀=50Ω, t_p=100ns, t_r=2ns, averaging window from 60ns to 80ns. R_DYNis calculated from 4A to 16A.

Rev.4-1-12312022

2/4

MCCSEMI.COM

123 4

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