Datasheet > ES1D

ES1D

更新时间： 2023-12-06 20:07:52

品牌	Logo	应用领域
先科 - SWST		PC 光电二极管
页数	文件大小	规格书
4页	454K
描述
快恢复整流管

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数据手册

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ES1D 数据手册

ES1A THRU ES1M

Surface Mount Superfast Recovery Rectifiers

Reverse Voltage - 50 to 1000 V

Forward Current - 1 A

PINNING

DESCRIPTION

Cathode

Features

• Glass passivated junction

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

• Easy pick and place

Anode

• For surface mounted applications

• Low profile package

Top view

Plastic Package : SMA(DO-214AC)

• Built-in strain relief

• Superfast recovery times for high efficiency

Mechanical Data

• Case: SMA (DO-214AC), molded plastic

• Terminals: Solder plated, solderable per

MIL-STD-750, Method 2026 guaranteed

• Polarity: Color band denotes cathode end

Absolute Maximum Ratings and Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Symbols

ES1A ES1B ES1C ES1D ES1E ES1G ES1J ES1K ES1M Units

Parameter

Marking ES1A ES1B ES1C ES1D ES1E ES1G ES1J ES1K ES1M

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

I_F(AV)

Peak Forward Surge Current 8.3 ms Single

Half Sine Wave Superimposed on Rated

Load (JEDEC Method)

I_FSM

Maximum Forward Voltage at 1 A

V_F

I_R

1.25

1.7

3.2

Maximum Reverse Current

at Rated DC Blocking Voltage

T_J= 25℃

T_J= 125℃

100

µA

Typical Junction Capacitance

at V_R= 4 V, f = 1 MH_Z

C_J

t_rr

Typical Reverse Recovery Time

at I_F= 0.5 A, I_R= 1 A, I_rr= 0.25 A

Typical Thermal Resistance¹^）

℃/W

R_θJA

℃

Operating Junction and Storage Temperature Range T_j,T_stg

- 55 to + 150

^）P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas.

1 / 4

Dated : 30/12/2021 JD&GD&SS Rev: 05

12 3 4

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