Datasheet > ERB12-01

ERB12-01

更新时间： 2024-11-19 20:18:51

品牌	Logo	应用领域
EIC		二极管
页数	文件大小	规格书
2页	28K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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ERB12-01 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

ERB12-01 数据手册

SILICON RECTIFIER DIODES

ERB12-01 ~ ERB12-10

DO - 41

PRV : 100 - 1000 Volts

Io : 1.0 Ampere

1.00 (25.4)

0.107 (2.72)

MIN.

0.080 (2.03)

0.205 (5.20)

0.160 (4.10)

FEATURES :

* High current capability

* High surge current capability

* High reliability

0.034 (0.86)

0.028 (0.71)

1.00 (25.4)

MIN.

* Low reverse current

* Low forward voltage drop

Dimensions in inches and ( millimeters )

MECHANICAL DATA :

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.34 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 50 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

ERB

RATING

SYMBOL

UNIT

12-01 12-02 12-04 12-06 12-10

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

1.0

600

420

600

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Current (See Fig. 1)

Non-Repetitive Peak Forward Surge Current

( Sine wave 10 ms at no load)

IF(AV)

IFSM

Maximum Forward Voltage at IF = 2.0 A

Maximum Repetitive Peak Reverse Current

Junction Temperature Range

IRRM

1.1

°C

- 40 to + 140

Storage Temperature Range

TSTG

Page 1 of 2

Rev. 01 : August 13, 2003

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