5秒后页面跳转
ER1M-T PDF预览

ER1M-T

更新时间: 2024-01-17 18:15:23
品牌 Logo 应用领域
美微科 - MCC 二极管光电二极管
页数 文件大小 规格书
3页 633K
描述
暂无描述

ER1M-T 数据手册

 浏览型号ER1M-T的Datasheet PDF文件第2页浏览型号ER1M-T的Datasheet PDF文件第3页 
ER1A  
THRU  
ER1M  
M C C  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
1 Amp Super Fast  
Recovery  
Silicon Rectifier  
50 to 1000 Volts  
Features  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
For Surface Mount Applications  
·
·
·
·
·
Extremely Low Thermal Resistance  
Easy Pick And Place  
High Temp Soldering: 250°C for 10 Seconds At Terminals  
Superfast Recovery Times For High Efficiency  
Maximum Ratings  
DO-214AA  
(SMBJ) (Round Lead)  
·
·
·
Operating Temperature: -50°C to +150°C  
Storage Temperature: -50°C to +150°C  
Maximum Thermal Resistance; 15°C/W Junction To Lead  
H
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
Cathode Band  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
J
ER1A  
ER1B  
ER1C  
ER1D  
ER1G  
ER1J  
ER1K  
ER1M  
ER1A  
ER1B  
ER1C  
ER1D  
ER1G  
ER1J  
ER1K  
ER1M  
35V  
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
70V  
100V  
105V  
140V  
280V  
420V  
560V  
700V  
150V  
200V  
400V  
600V  
800V  
1000V  
A
C
E
D
B
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIMENSIONS  
Average Forward  
Current  
IF(AV)  
1.0A  
TJ = 75°C  
INCHES  
MIN  
.078  
.075  
.002  
-----  
.035  
.065  
.205  
.160  
.130  
MM  
MIN  
1.98  
1.90  
.05  
-----  
.90  
1.65  
5.21  
4.06  
3.30  
DIM  
A
B
C
D
E
MAX  
.116  
.089  
.008  
.02  
.055  
.091  
.224  
.180  
.155  
MAX  
2.95  
2.25  
.20  
NOTE  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
.51  
1.40  
2.32  
5.69  
4.57  
3.94  
Maximum  
Instantaneous  
F
G
H
J
Forward Voltage  
ER1A-D  
.975V  
1.35V  
1.60V  
VF  
IR  
IFM = 1.0A;  
TJ = 25°C*  
ER1G-K  
ER1M  
SUGGESTED SOLDER  
PAD LAYOUT  
Maximum DC  
0.090"  
Reverse Current At  
Rated DC Blocking  
Voltage  
5mA  
TJ = 25°C  
100mA TJ = 100°C  
Maximum Reverse  
0.085”  
Recovery Time  
ER1A-D  
50ns  
Trr  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
ER1G-K  
60ns  
ER1M  
100ns  
0.070”  
Typical Junction  
Capacitance  
CJ  
45pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 200 msec, Duty cycle 2%  
www.mccsemi.com  

与ER1M-T相关器件

型号 品牌 描述 获取价格 数据表
ER1M-TP MCC Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AA, HSMB, 2 PIN

获取价格

ER1M-TP-HF MCC Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AA, HSMB, 2 PIN

获取价格

ER1Q MCC 1 Amp Super Fast Recovery Silicon Rectifier 1200 to 2000 Volts

获取价格

ER1Q-L MCC Tape : 3K/Reel, 48K/Ctn;

获取价格

ER1Q-LTP MCC 暂无描述

获取价格

ER1QP MCC DIODE 1 A, 1200 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, HSMB, 2 PIN, Signal Diode

获取价格